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STMicroelectronics N-Channel STripFET DeepGate MOSFET 110 A, 100 V, 3-Pin TO-220 STP240N10F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP240N10F7 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | DeepGate, STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a TO-220 package with 3 pins suitable for through-hole mounting.
- Low on-resistance of 3.2 milliohms, enhancing conduction efficiency.
- Operates within a temperature range from -55°C to 175°C for versatile industrial conditions.
- Capable of handling a maximum power dissipation of 300 W.
- Typical forward voltage drop is 1.2 V, minimizing energy loss during switching.
- Maximum gate-source voltage rating from -20 V to +20 V ensures robust gate drive tolerance.
- Designed with an enhancement mode channel for controlled switching.
- Gate charge of 160 nC supports fast switching speed.
Product Description
STMicroelectronics STP240N10F7 is a high-performance N-Channel STripFET™ DeepGate™ MOSFET transistor housed in a TO-220 package with 3 pins, designed for efficient power switching and amplification in electronic circuits. It features an ultra-low gate charge and low on-resistance, optimized for high current loads up to 110 amperes and a maximum drain-source voltage of 100 volts.
The device supports a maximum power dissipation of 300 watts and is engineered to operate from a minimum temperature of -55 degrees Celsius to a maximum of 175 degrees Celsius, making it suitable for demanding industrial environments. The gate voltage tolerance ranges from -20 volts to +20 volts, providing flexibility in various driving conditions.
This MOSFET uses an enhancement-mode N-channel configuration, ensuring precise control and switching characteristics. The typical forward voltage drop of 1.2 volts along with a gate charge of 160 nC contribute to its high efficiency and fast switching capabilities.
The compact dimensions of the TO-220 package (Length 10.4 mm, Width 4.6 mm, Height 15.75 mm) facilitate easy installation in power circuits and assemblies. Its through-hole mount type ensures strong mechanical connection for enhanced reliability.
This component is ideal for applications in industrial power management systems, motor drives, power inverters, and high-current switching applications within electronics manufacturing and design.
Features a TO-220 package with 3 pins suitable for through-hole mounting. Low on-resistance of 3.2 milliohms, enhancing conduction efficiency. Operates within a temperature range from -55°C to 175°C for versatile industrial conditions.
Capable of handling a maximum power dissipation of 300 W. Typical forward voltage drop is 1.2 V, minimizing energy loss during switching. Maximum gate-source voltage rating from -20 V to +20 V ensures robust gate drive tolerance.
Designed with an enhancement mode channel for controlled switching. Gate charge of 160 nC supports fast switching speed. Ideal for industrial power management, electronic switching, and motor drive circuits. Secure your supply of STMicroelectronics STP240N10F7 MOSFETs on EnvMart for reliable semiconductor components fitting industrial electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STP240N10F7 is 110 A.
This model can handle a maximum drain-source voltage of 100 V.
The on-resistance of the STP240N10F7 is 3.2 milliohms, enhancing conduction efficiency.
It operates within a temperature range from -55°C to 175°C, making it suitable for various industrial conditions.
The STP240N10F7 uses a TO-220 package with 3 pins, suitable for through-hole mounting.
The typical forward voltage drop is 1.2 V, which minimizes energy loss during switching.
The gate charge for this model is 160 nC, supporting fast switching speed.
It is capable of handling a maximum power dissipation of 300 W.
The maximum gate-source voltage rating ranges from -20 V to +20 V, ensuring robust gate drive tolerance.
This model features an enhancement mode N-channel configuration for controlled switching.
The dimensions of the TO-220 package are 10.4 mm in length, 4.6 mm in width, and 15.75 mm in height.
It is ideal for applications in industrial power management systems, motor drives, and high-current switching applications.
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