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Infineon HEXFET Type P-Channel MOSFET 38 A 100 V Enhancement 3-Pin TO-263 IRF5210STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF5210STRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 38A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- Features a low 60 milliohm maximum drain source resistance to ensure low conduction losses.
- Enhancement mode P-channel MOSFET suitable for efficient switching applications.
- Maximum power dissipation of 170 W supports high power operation.
- Designed to operate across a temperature range from -55°C to 150°C.
- Compact form factor with dimensions 10.67 mm length, 9.65 mm width, and 4.83 mm height.
- Capable of handling gate voltages between -20 V and +20 V for flexibility in driving signals.
- Typical gate charge is 150 nC, providing efficient switching performance.
- Forward voltage of -1.6 V suitable for power applications.
Product Description
Infineon IRF5210STRLPBF HEXFET Type P-Channel MOSFET is a robust semiconductor device designed for high-efficiency power management applications. Rated at a maximum continuous drain current of 38 A and drain source voltage of 100 V, this enhancement-mode MOSFET is engineered to deliver low conduction losses and high switching efficiency.
The device is encapsulated in a TO-263 surface-mount package measuring 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, making it well-suited for compact electronic designs. It supports a maximum power dissipation of 170 W, allowing reliable operation in demanding environments.
Operating temperatures range from -55°C to 150°C, ensuring suitability across broad industrial and automotive applications. The typical gate charge of 150 nC enables efficient control while the gate source voltage rating of -20 V to +20 V allows flexible driving options.
This MOSFET delivers a maximum drain-source resistance of only 60 milliohms, minimizing power losses and heat generation in circuits. Its forward voltage of -1.6 V meets requirements for power switching elements in applications such as DC/DC power converters, load switches, and motor controls.
Low conduction losses maximize system efficiency. Enhancement mode operation simplifies circuit design. Robust thermal tolerance supports high power dissipation. Compact TO-263 package supports automated PCB assembly. Wide operating temperature range for industrial use.
Flexible gate voltage range for compatibility with many driver circuits.
Infineon's HEXFET series combines advanced semiconductor technologies to realize power transistors that balance performance and reliability. The IRF5210STRLPBF model is especially suited for discrete semiconductor uses where power handling and efficiency are critical.
This product is ideally used in industrial electronics manufacturing, automotive power control modules, renewable energy converters, and other applications where reliable high current P-channel MOSFETs are required.
Explore related Infineon semiconductor components and power MOSFET devices in the EnvMart catalog to find complementary parts for your electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 38 A.
This P-channel MOSFET has a maximum drain-source voltage rating of 100 V.
The maximum power dissipation for the IRF5210STRLPBF is 170 W.
The TO-263 package measures 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The typical gate charge is 150 nC.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V.
The maximum drain-source resistance for this model is 60 milliohms.
It can operate within a temperature range from -55°C to 150°C.
This model uses surface mounting.
It is suitable for applications such as DC/DC power converters, load switches, and motor controls.
The forward voltage for the IRF5210STRLPBF is -1.6 V.
This model belongs to the HEXFET series.
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