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Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V, Enhancement Mode, 3-Pin TO-263 IRF4905STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF4905STRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Key Features
- Operates efficiently with low on-resistance for enhanced energy performance.
- Supports operation within a temperature range from -55°C to 150°C.
- Designed for fast switching applications improving circuit performance.
- Features robust construction suitable for repetitive avalanche conditions.
- Ideal for power management systems and motor control applications.
- Compatible with gate-to-source voltages between -20 V and +20 V.
- Capable of handling pulsed drain currents up to 280 A for dynamic use cases.
- Surface mountable package (D2PAK TO-263) for easy PCB assembly.
Product Description
Infineon IRF4905STRLPBF HEXFET Type P-Channel MOSFET delivers a maximum continuous drain current of 70 A and a maximum drain-source voltage of 55 V. Housed in a compact 3-pin TO-263 package, this device operates in enhancement mode and offers a maximum power dissipation of 170 W, making it well-suited for high power and industrial applications.
This MOSFET is engineered for reliability and energy efficiency with a low on-resistance of 20 milliohms and a typical gate charge of 120 nC at Vgs. It supports fast switching speeds, enabling its use in demanding electronic circuits including power management systems, switching power supplies, and motor controls.
Operating temperature ranges from -55°C to +150°C ensure durability under extreme environmental conditions. The device features a forward voltage of approximately -1.3 V and can tolerate gate-source voltages from -20 V to +20 V, allowing safe and flexible gate drive design.
Infineon's HEXFET design enables robust performance under repetitive avalanche conditions, enhancing longevity and stability in industrial, automotive, and automation applications. The surface mount D2PAK TO-263 package facilitates straightforward mounting onto printed circuit boards.
Improves system efficiency through its low on-resistance characteristics. Ensures stable operation across a wide temperature span from -55°C to 150°C. Supports rapid switching for use in high-frequency electronic circuits.
Offers robust avalanche capability suitable for industrial environments. Facilitates easy PCB integration with surface mount TO-263 packaging. Handles pulsed currents up to 280 A for transient heavy loads. Ideal for power management and control in industrial automation and automotive sectors.
This MOSFET is a reliable choice in applications requiring high current handling and efficient switching within moderate voltage ranges. It is extensively used in automation, industrial electronics, and power conversion devices, highlighting Infineon's commitment to quality semiconductor components.
Explore more Infineon semiconductor products at EnvMart for a comprehensive selection of advanced MOSFETs and power devices to meet your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 70 A.
This MOSFET has a maximum drain-source voltage of 55 V.
It operates within a temperature range from -55°C to 150°C.
This model is housed in a surface mount TO-263 package.
The maximum drain-source resistance is 20 milliohms.
The maximum power dissipation for this MOSFET is 170 W.
It can tolerate gate-source voltages from -20 V to +20 V.
The typical gate charge at Vgs is 120 nC.
This model is ideal for power management systems and motor control applications.
The forward voltage is approximately -1.3 V.
This MOSFET features a 3-pin configuration.
The height of the TO-263 package is 4.83 mm.
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