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ROHM N-Channel MOSFET 1.6 A 800 V Enhancement 3-Pin TO-220FM R8002KNXC7G
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 29.87mm |
| Length | 10.3mm |
| Model | R8002KNXC7G |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FM |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 4.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 28W |
| Typical Gate Charge Qg @ Vgs | 7.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features enhancement mode for efficient switching performance.
- Configured in a 3-pin TO-220FM package suitable for through-hole mounting.
- Low on-resistance of 4.2 Ω supports energy-efficient operation.
- Maximum gate-source voltage rating of 20 V ensures reliability.
- Capable of operating from -55°C up to 150°C for versatile industrial applications.
- Typical gate charge is 7.5 nC aiding fast switching speeds.
- Supports maximum power dissipation of 28 W for demanding circuits.
Product Description
ROHM R8002KNXC7G is a high-speed, super junction N-Channel MOSFET designed for high efficiency in power electronic circuits. Rated for a continuous drain current of 1.6 A and a maximum drain-source voltage of 800 V, it is ideal for power factor correction (PFC) and LLC resonant converter applications. The enhancement mode MOSFET features a 3-pin TO-220FM package facilitating through-hole mounting on printed circuit boards.
Its low on-resistance of 4.2 Ω results in reduced conduction losses, while the maximum gate-source voltage of 20 V ensures robustness against voltage spikes. The MOSFET supports a wide operating temperature range from -55°C to 150°C, making it reliable in industrial and commercial environments.
The device's typical gate charge of 7.5 nC enables ultra-fast switching performance, enhancing efficiency in switching power supplies. With a maximum power dissipation rating of 28 W, this MOSFET suits medium-power electronic designs.
Physical dimensions are compact with a length of 10.3 mm, width of 5 mm, and height of 29.87 mm, which helps in space-constrained PCB designs. The product is RoHS compliant and features Pb-free plating contributing to environmental safety standards.
Enhancement mode N-Channel MOSFET for efficient power control. High voltage rating enables use in high power circuits. Low on-resistance reduces power loss and heat. Wide operating temperature range suitable for demanding environments.
Through-hole TO-220FM package for easy PCB integration. High maximum power dissipation rating supports robust applications. RoHS compliant with Pb-free plating. Compact physical dimensions for flexible use.
This MOSFET is ideal for industrial electronics, power supply units, manufacturing equipment, and HVAC control circuits. Its fast switching and reliable performance help optimize energy efficiency and system reliability.
Explore more semiconductor solutions in the MOSFET category to meet your electronic design needs on EnvMart.
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Frequently Asked Questions
The maximum drain-source voltage rating is 800 V, making it suitable for high power circuits.
This model has a maximum continuous drain current capacity of 1.6 A.
The on-resistance is 4.2 Ω, which helps in reducing conduction losses during operation.
The typical gate charge is 7.5 nC, facilitating fast switching speeds.
It supports a maximum power dissipation of 28 W, suitable for medium-power electronic designs.
The dimensions are 10.3 mm in length, 5 mm in width, and 29.87 mm in height.
It can operate within a temperature range of -55°C to 150°C, making it versatile for various applications.
It is configured in a 3-pin TO-220FM package, suitable for through-hole mounting.
The maximum gate-source voltage rating is 20 V, ensuring reliability against voltage spikes.
This MOSFET is ideal for power factor correction (PFC) and LLC resonant converter applications.
Yes, the device is RoHS compliant and features Pb-free plating, contributing to environmental safety standards.
The channel type is N-Channel, designed for enhancement mode operation.
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