Infineon HEXFET N-Channel MOSFET 99A 60V Enhancement Mode 3-Pin TO-252 IRLR3636TRPBF

Infineon IRLR3636TRPBF HEXFET N-Channel MOSFET is a robust power transistor designed for high-current switching in surface-mount circuitry. This device operates with a maximum continuous drain current of 99A and a maximum drain-source voltage of 60V, making it suitable for medium-voltage applications. Packaged in a compact TO-252 format, it facilitates low-inductance connections and efficient thermal management on printed circuit boards.

With a very low on-resistance of 8.3mΩ, this MOSFET minimizes conduction losses and supports high efficiency in power electronics. Its maximum power dissipation rating of 143W enables it to sustain demanding power loads, while the typical gate charge of 49nC allows for predictable switching speeds critical in high-frequency applications.

Engineered to function over a wide temperature range from -55°C to 175°C, it is suitable for industrial, automotive, and power management applications that require reliable operation under harsh thermal conditions.

The gate-source voltage rating of ±16V ensures the device is driven within safe limits, preventing gate oxide damage. Its enhancement mode N-channel architecture requires a positive gate drive relative to the source to activate, affording efficient control in switching circuits.

Common uses include motor driver stages in electric actuators, high-current DC-DC converters and voltage regulators, battery management systems, power distribution modules, and synchronous rectification in power supplies. This MOSFET is well-suited for industrial switching in variable-speed drive systems.

Designed for high-current switching in surface-mounted applications. Offers a low drain-source resistance (8.3mΩ) to reduce conduction losses. Supports maximum power dissipation of 143W for sustained operations. Operates reliably from -55°C to 175°C, suitable for demanding thermal environments.

Typical gate charge of 49nC ensures predictable and efficient switching performance. Maximum gate-source voltage rating of ±16V to protect gate oxide integrity. Compact TO-252 surface-mount package enables efficient PCB layout and heat dissipation.

Ideal for motor drivers, DC-DC converters, battery management, and synchronous rectification. Explore more industrial semiconductor products like this Infineon MOSFET in our Electronics & Electricals category at EnvMart for your advanced circuit design needs.