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Infineon HEXFET N-Channel MOSFET 28A 55V TO-252 Surface Mount 3-Pin IRLR2705TRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR2705TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK Infineon IRLR2705PBFBrand | Infineon |
Key Features
- High continuous drain current of 28A for robust power handling.
- Maximum drain-source voltage rating of 55V for reliable switching.
- Low on-resistance of 65mΩ minimizes conduction losses.
- Supports operating temperatures from -55°C to 175°C for durability.
- Three-pin TO-252 package facilitates surface mount applications.
- Enhancement mode channel configuration simplifies circuit design.
- Maximum power dissipation of 68W enables efficient heat management.
- Typical gate charge of 25nC ensures efficient switching performance.
Product Description
Infineon IRLR2705TRPBF is a HEXFET N-Channel MOSFET designed for industrial and electronic power management applications. Featuring a continuous drain current of 28A and drain-source voltage of 55V, this device is packaged in a compact TO-252 surface mount form factor with 3 pins.
This MOSFET offers low on-resistance of 65mΩ and operates efficiently across a wide temperature range from -55°C up to 175°C, ensuring reliable performance in demanding environments. The enhancement mode channel configuration simplifies its integration into switching circuits.
The device supports a maximum power dissipation of 68W, allowing for effective heat management during high current operation. A typical gate charge of 25nC ensures fast switching capabilities suitable for energy-efficient power supplies and motor control circuits.
As a surface mount device, it is designed for automated soldering, commonly used in industrial automation, power supply units, and DC-DC converters. Its compact size (6.73mm length, 6.22mm width, 2.39mm height) supports high-density PCB layouts.
High continuous drain current of 28A for robust power handling. Maximum drain-source voltage rating of 55V for reliable switching. Low on-resistance of 65mΩ minimizes conduction losses. Supports operating temperatures from -55°C to 175°C for durability.
Three-pin TO-252 package facilitates surface mount applications. Enhancement mode channel configuration simplifies circuit design. Maximum power dissipation of 68W enables efficient heat management. Typical gate charge of 25nC ensures efficient switching performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 28A, allowing for robust power handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 55V, ensuring reliable switching performance.
The on-resistance of this model is 65mΩ, which helps minimize conduction losses during operation.
It supports operating temperatures from -55°C to 175°C, making it suitable for use in demanding environments.
The typical gate charge is 25nC, which ensures efficient switching performance.
This model is packaged in a TO-252 surface mount format, which facilitates automated soldering.
The maximum power dissipation for this MOSFET is 68W, enabling effective heat management during high current operation.
This model has 3 pins, which is typical for its TO-252 package configuration.
It features an enhancement mode channel configuration, simplifying integration into switching circuits.
The height of this MOSFET is 2.39mm, contributing to its compact design.
The dimensions of this model are 6.73mm in length, 6.22mm in width, and 2.39mm in height.
This MOSFET is commonly used in industrial automation, power supply units, and DC-DC converters due to its specifications.
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