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Infineon HEXFET N-Channel MOSFET, 2.8 A Max Drain Current, 55 V Voltage, Enhancement Mode, 4-Pin SOT-223 IRLL014NTRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 1.739mm |
| Length | 6.7mm |
| Model | IRLL014NTRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.8A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 9.5nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1V |
Key Features
- This HEXFET device operates in enhancement mode for reliable power switching.
- Surface mount package supports efficient PCB integration and thermal management.
- Low drain-source on-resistance of 280mΩ minimizes power dissipation.
- Rated for maximum power dissipation of 2.1 W enabling stable operation up to 150°C.
- Typical gate charge of 9.5 nC facilitates fast switching.
- Wide operating temperature range from -55°C to +150°C ensures versatility in harsh environments.
- Maximum gate-source voltage of -16 V to +16 V protects against voltage extremes.
- Compact dimensions (6.7 mm length × 3.7 mm width × 1.739 mm height) optimize space usage.
Product Description
Infineon IRLL014NTRPBF is a HEXFET N-Channel MOSFET designed for efficient power management and switching applications. It supports a maximum continuous drain current of 2.8 A and can withstand up to 55 V across the drain-source terminals. This enhancement mode device is housed in a 4-pin SOT-223 surface mount package, promoting space-efficient integration and enhanced thermal performance on printed circuit boards.
The device features a low on-resistance of 280 milliohms, which reduces power losses and increases energy efficiency. With a power dissipation rating of 2.1 W, it ensures reliable operation up to 150°C, making it suitable for use in demanding environmental conditions. The typical gate charge of 9.5 nC at the specified gate-source voltage allows for rapid switching necessary in modern electronics.
The wide operating temperature range from -55°C to +150°C enables deployment in various industrial, automotive (non-certified), and consumer electronics systems. The gate-source voltage tolerance of -16 V to +16 V is critical for device protection in high-performance circuits.
Physically compact with dimensions of 6.7 mm length, 3.7 mm width, and 1.739 mm height, this MOSFET facilitates high-density PCB layouts without compromising electrical integrity.
Common use cases for the IRLL014NTRPBF include automation system motor controls, power supplies with efficient voltage regulation, battery management for enhanced energy usage, and LED driver circuits for optimized lighting control.
This HEXFET MOSFET provides dependable performance for power switching applications. Compact surface mount SOT-223 package enhances thermal dissipation and PCB integration. Low on-resistance reduces energy losses and improves efficiency.
Operates reliably over a broad temperature range from -55°C to 150°C. Typical gate charge allows for quick switching capability. Designed to handle maximum gate-source voltages safely within ±16 V. Suitable for a variety of electronic and industrial applications.
Manufactured in China with consistent quality. Explore the Infineon range and related semiconductor components at EnvMart for your electronics design and power management requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.8 A.
This device can withstand a maximum drain-source voltage of 55 V.
It is housed in a 4-pin SOT-223 surface mount package.
The operating temperature range is from -55°C to +150°C.
The typical gate charge is 9.5 nC at the specified gate-source voltage.
The device features a low drain-source on-resistance of 280 mΩ.
It has a maximum power dissipation rating of 2.1 W.
The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.739 mm in height.
The maximum gate-source voltage is rated at -16 V to +16 V.
Common applications include automation system motor controls, power supplies, battery management, and LED driver circuits.
This device uses an N-channel configuration in enhancement mode.
It is manufactured in China.
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