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DiodesZetex Bipolar Transistor, NPN, 100 mA, 45 V, 3-Pin DFN Package BC847BFA-7B

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.4mm
Length 0.65mm
Model BC847BFA-7B
Width 0.85mm
Mount Type Surface
Series BC847BFA
Maximum Operating Temperature 150°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 435mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Diodes Inc BC846BLP4-7B Transistor, 100 mA NPN, 65 V, 3-Pin X2-DFN1006Brand DiodesZetex

Key Features

  • Small signal NPN transistor suitable for surface mount applications.
  • Maximum DC collector current of 100 mA ensures efficient switching performance.
  • Collector emitter voltage rating of 45 V allows use in moderate voltage circuits.
  • Compact 3-pin DFN package with dimensions 0.65 mm length, 0.85 mm width, and 0.4 mm height.
  • Features a high minimum DC current gain (hFE) of 200 for reliable amplification.
  • Wide operating temperature range from -55°C to 150°C accommodates harsh environments.
  • Maximum power dissipation of 435 mW supports moderate power applications.
  • Automotive standard AEC-Q101 certification ensures reliability for automotive electronics.

Product Description

DiodesZetex BC847BFA-7B is a high-performance bipolar NPN transistor designed for switching and amplification in electronic circuits. It supports a maximum collector current of 100 mA and operates with a maximum collector emitter voltage of 45 V. The device is packaged in a 3-pin DFN surface mount package with a small footprint, measuring 0.65 mm in length, 0.85 mm in width, and 0.4 mm in height.

This transistor features a transistor configuration of single polarity NPN with a minimum DC current gain (hFE) of 200, providing effective signal amplification. It can operate reliably in temperatures ranging from -55°C to 150°C, making it suitable for industrial and automotive applications. Maximum power dissipation is rated at 435 mW, ensuring it can handle moderate power levels safely.

The device withstands a maximum collector base voltage of 50 V and a maximum emitter base voltage of 6 V. Its transition frequency reaches up to 100 MHz, enabling fast switching speeds required in many modern electronic applications. The transistor's compliant designs meet the automotive AEC-Q101 quality standard, underlining its robustness and suitability for automotive and other demanding environments.

Applications include general-purpose small signal amplification and switching in circuits used in consumer electronics, automotive electronics, industrial equipment, and communication devices. The compact DFN package allows for high-density PCB layouts while maintaining ease of thermal management.

Small signal NPN transistor suitable for surface mount applications. High DC current gain (minimum hFE 200) for signal amplification. Maximum collector current of 100 mA for efficient switching. Maximum collector emitter voltage of 45 V for moderate voltage handling.

Compact 3-pin DFN package with low profile dimensions. Wide operating temperature range from -55°C to 150°C for industrial and automotive use. Maximum power dissipation of 435 mW for moderate power applications. Complies with automotive standard AEC-Q101 for reliability.

This component is ideal for use in industrial, automotive, telecommunications, and general electronic instrumentation where reliable high-frequency switching and amplification are required. Explore more Bipolar Transistors and semiconductor components in the EnvMart Electronics & Electricals category for your project needs.

DiodesZetex Bipolar Transistor, NPN, 100 mA, 45 V, 3-Pin DFN Package BC847BFA-7B
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Frequently Asked Questions

The maximum collector current for this model is 100 mA, which ensures efficient switching performance.

It has a maximum collector-emitter voltage rating of 45 V, allowing use in moderate voltage circuits.

The DFN package measures 0.65 mm in length, 0.85 mm in width, and 0.4 mm in height.

The minimum DC current gain (hFE) is 200, providing effective signal amplification.

It operates reliably within a temperature range from -55°C to 150°C, making it suitable for harsh environments.

The maximum power dissipation is rated at 435 mW, supporting moderate power applications.

The maximum transition frequency is up to 100 MHz, enabling fast switching speeds.

This transistor comes in a 3-pin DFN package, suitable for surface mount applications.

It complies with the automotive standard AEC-Q101, ensuring reliability for automotive electronics.

The maximum emitter-base voltage (VEBO) is 6 V.

It is suitable for general-purpose small signal amplification and switching in consumer electronics, automotive electronics, and industrial equipment.

The transistor configuration is single polarity NPN, designed for effective switching and amplification.

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