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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.4mm |
| Length | 0.65mm |
| Model | BC847BFA-7B |
| Width | 0.85mm |
| Mount Type | Surface |
| Series | BC847BFA |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 435mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| Diodes Inc BC846BLP4-7B Transistor, 100 mA NPN, 65 V, 3-Pin X2-DFN1006Brand | DiodesZetex |
DiodesZetex BC847BFA-7B is a high-performance bipolar NPN transistor designed for switching and amplification in electronic circuits. It supports a maximum collector current of 100 mA and operates with a maximum collector emitter voltage of 45 V. The device is packaged in a 3-pin DFN surface mount package with a small footprint, measuring 0.65 mm in length, 0.85 mm in width, and 0.4 mm in height.
This transistor features a transistor configuration of single polarity NPN with a minimum DC current gain (hFE) of 200, providing effective signal amplification. It can operate reliably in temperatures ranging from -55°C to 150°C, making it suitable for industrial and automotive applications. Maximum power dissipation is rated at 435 mW, ensuring it can handle moderate power levels safely.
The device withstands a maximum collector base voltage of 50 V and a maximum emitter base voltage of 6 V. Its transition frequency reaches up to 100 MHz, enabling fast switching speeds required in many modern electronic applications. The transistor's compliant designs meet the automotive AEC-Q101 quality standard, underlining its robustness and suitability for automotive and other demanding environments.
Applications include general-purpose small signal amplification and switching in circuits used in consumer electronics, automotive electronics, industrial equipment, and communication devices. The compact DFN package allows for high-density PCB layouts while maintaining ease of thermal management.
Small signal NPN transistor suitable for surface mount applications. High DC current gain (minimum hFE 200) for signal amplification. Maximum collector current of 100 mA for efficient switching. Maximum collector emitter voltage of 45 V for moderate voltage handling.
Compact 3-pin DFN package with low profile dimensions. Wide operating temperature range from -55°C to 150°C for industrial and automotive use. Maximum power dissipation of 435 mW for moderate power applications. Complies with automotive standard AEC-Q101 for reliability.
This component is ideal for use in industrial, automotive, telecommunications, and general electronic instrumentation where reliable high-frequency switching and amplification are required. Explore more Bipolar Transistors and semiconductor components in the EnvMart Electronics & Electricals category for your project needs.
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