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onsemi 1 A NPN Transistor, 100 V DC, TO-220 Package, 3-Pin TIP29CG

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model TIP29CG
Width 4.83mm
Mount Type Through Hole
Series TIP29
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V dc
Minimum DC Current Gain hFE 15
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V dc
Maximum Power Dissipation Pd 30W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
onsemi TIP29CG NPN Bipolar Transistor, 1 A, 100 V, 4-Pin TO-220ABBrand ON Semiconductor

Key Features

  • Supports maximum DC collector current of 1 ampere.
  • Maximum collector-emitter voltage rating of 100 volts DC.
  • Packaged in a durable TO-220 with 3 pins for through-hole mounting.
  • Operates efficiently at temperatures ranging from -65°C to 150°C.
  • Maximum power dissipation up to 30 watts for reliable operation.
  • Low frequency transition capability up to 1 MHz for standard applications.
  • Designed for single transistor configuration with NPN polarity.
  • Physical dimensions approximately 30.02 mm height, 10.53 mm length, and 4.83 mm width.

Product Description

onsemi TIP29CG 1 A NPN transistor is a robust semiconductor device designed for switching and amplification tasks within a wide range of electronic and electrical applications. It offers a maximum DC collector current of 1 ampere and a collector-emitter voltage rating of 100 volts DC, making it suitable for moderate power workloads.

The transistor is packaged in a TO-220 form factor with 3 pins and is intended for through-hole mounting on printed circuit boards. Its physical dimensions include a height of 30.02 mm, length of 10.53 mm, and width of 4.83 mm, providing reliable mechanical stability.

With a maximum power dissipation of 30 watts and operational temperature range from -65°C to 150°C, the TIP29CG transistor ensures consistent performance even under challenging environmental conditions. It features an NPN polarity and operates with a minimum DC current gain of 15, suitable for general purpose switching.

This transistor supports a maximum transition frequency of 1 MHz, suitable for standard electronic circuits that do not require high-frequency operation. It fits applications within industrial electronics, power supplies, control circuits, and other manufacturing or repair domains.

Supports maximum DC collector current of 1 ampere. Maximum collector-emitter voltage rating of 100 volts DC. 30 watts maximum power dissipation for reliable heat handling. Packaged in TO-220 3-pin through-hole mount configuration.

Operational temperature range from -65°C to 150°C. Minimum DC current gain of 15 for effective amplification. Maximum transition frequency of 1 MHz. Physical dimensions allow for robust installation and heat dissipation.

Single NPN transistor suitable for general purpose electronic uses.

This transistor is an essential component for engineers and technicians focusing on general purpose electronic circuit design and industrial manufacturing. For more transistor options, explore EnvMart’s extensive semiconductor and discrete component selection.

Explore more products in our Bipolar Transistors category.

onsemi 1 A NPN Transistor, 100 V DC, TO-220 Package, 3-Pin TIP29CG
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Frequently Asked Questions

The maximum DC collector current for this model is 1 ampere.

It has a maximum collector-emitter voltage rating of 100 volts DC.

The physical dimensions are approximately 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.

The maximum power dissipation for this model is 30 watts.

It operates efficiently within a temperature range from -65°C to 150°C.

The maximum transition frequency is 1 MHz.

This transistor is packaged in a TO-220 form factor and supports through-hole mounting.

The minimum DC current gain for this model is 15.

It is designed as a single NPN transistor configuration.

This transistor is suitable for general purpose switching and amplification tasks in electronic circuits.

The maximum emitter-base voltage (VEBO) is 5 volts.

The country of origin for this model is India.

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