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Infineon OptiMOS 3 N-Channel Power MOSFET, 40 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin BSZ050N03LSGATMA1

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Infineon OptiMOS 3 N-Channel Power MOSFET, 40 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin BSZ050N03LSGATMA1

Name: Infineon OptiMOS 3 N-Channel Power MOSFET, 40 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin BSZ050N03LSGATMA1
Brand: Infineon
SKU: 378958
Price: 0.48 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	3.4mm
Model	BSZ050N03LSGATMA1
Width	3.4mm
Mount Type	Surface
Series	OptiMOS 3
Maximum Operating Temperature	150°C
Package Type	TSDSON
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	7.8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	50W
Typical Gate Charge Qg @ Vgs	26nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Optimized for DC/DC converters and fast switching applications.
Offers very low on-resistance of 7.8mΩ at rated conditions for high efficiency.
Supports continuous power dissipation up to 50 W allowing robust thermal performance.
Operates reliably within a temperature range of -55°C to 150°C.
Provides typical gate charge of 26nC at Vgs enhancing switching speed.
Gate source voltage withstands ±20 V offering enhanced device protection.
Compact dimensions with 3.4 mm length, 3.4 mm width, and 1.1 mm height for space-constrained designs.
Lead-free plating complies with environmental standards.

Product Description

Infineon BSZ050N03LSGATMA1 is a high-performance OptiMOS 3 N-Channel Power MOSFET suitable for industrial and electronic equipment requiring efficient power management. It offers a continuous drain current of 40 A and supports a maximum drain source voltage of 30 V. Packaged in an 8-Pin TSDSON surface mount, it delivers excellent performance in a compact footprint.

Designed for fast switching and optimized for DC/DC converters, it features a very low on-resistance (Rds(on)) of 7.8 milliohms which reduces conduction losses and improves overall energy efficiency. The device operates reliably in a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

The MOSFET has a typical gate charge of 26 nC at a gate-source voltage of 26 V, facilitating rapid switching transitions. It tolerates gate-source voltages from -20 V to +20 V, providing additional robustness in circuit applications. With a maximum power dissipation of 50 W, it sustains high power loads while maintaining thermal stability.

Compact with dimensions of 3.4 mm length, 3.4 mm width, and 1.1 mm height, the BSZ050N03LSGATMA1 supports space-constrained applications in power supplies, automotive electronic control units, and other high-efficiency switching circuits. The lead-free plating ensures compliance with environmental and regulatory standards.

Infineon's OptiMOS 3 series MOSFET family is renowned for superior switching performance and power density, ideal for demanding industrial, automotive, and consumer electronics applications. This MOSFET supports JEDEC qualification standards and provides an excellent trade-off between speed, efficiency, and reliability.

Optimized for switching power supplies and DC/DC converters. Low gate charge and RDS(on) for improved efficiency. Surface mounting in an 8-Pin TSDSON package for compact design. Wide operating temperature range ensuring durability.

Lead-free plating for environmentally friendly use. Robust voltage ratings for industrial applications. Part of the trusted Infineon OptiMOS™3 product family. Explore more high-quality MOSFETs and discrete semiconductor solutions in the Electronics & Electricals category on EnvMart.