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Infineon OptiMOS P Type P-Channel Power Transistor 120 A 40 V Enhancement Mode 3-Pin TO-263 IPB120P04P4L03ATMA1

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Infineon OptiMOS P Type P-Channel Power Transistor 120 A 40 V Enhancement Mode 3-Pin TO-263 IPB120P04P4L03ATMA1

Name: Infineon OptiMOS P Type P-Channel Power Transistor 120 A 40 V Enhancement Mode 3-Pin TO-263 IPB120P04P4L03ATMA1
Brand: Infineon
SKU: 378910
Price: 20.22 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.4mm
Length	10mm
Model	IPB120P04P4L03ATMA1
Width	9.25mm
Mount Type	Surface
Series	OptiMOS P
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q
Channel Type	Type P
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	5.2mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	136W
Typical Gate Charge Qg @ Vgs	180nC
Maximum Gate Source Voltage Vgs	-16, +16V
Forward Voltage Vf	1.3V
OptiMOS™ P-Channel Series	Temperature range from -55°C to +175°C

Key Features

Supports a maximum continuous drain current of 120 A with low resistance.
Equipped with a TO-263 surface mount package with 3 pins.
Designed for use in automotive and industrial applications with AEC-Q qualification.
Features ultra-low switching losses and is avalanche rated for reliability.
Temperature operating range spans from -55°C to 175°C.
Typical gate charge at Vgs is 180 nC for efficient switching.
Maximum power dissipation capability reaches 136 W.
Complies with RoHS for environmental safety.

Product Description

Infineon IPB120P04P4L03ATMA1 OptiMOS P-Type P-Channel Power Transistor delivers 120 A maximum continuous drain current and 40 V maximum drain-source voltage in an enhancement mode design. Packaged in a 3-pin TO-263 surface mount case, it is engineered for high efficiency with ultra-low switching losses and low on-state resistance of 5.2 mΩ.

The device supports wide operating temperatures from -55°C up to 175°C, making it suitable for demanding automotive, motor control, and DC-DC converter applications. Being avalanche rated and AEC-Q qualified, it meets industry standards for robustness and reliability in automotive and industrial environments.

Its typical gate charge of 180 nC at the gate-source voltage ensures efficient switching performance, while the maximum power dissipation of 136 W allows for handling significant thermal demands in power management systems.

The power transistor's compact form has dimensions approximately 10 mm in length, 9.25 mm in width, and 4.4 mm in height, facilitating convenient integration into surface mount assemblies.

Infineon’s OptiMOS P-Channel series complies with RoHS directives, ensuring compliance with lead-free environmental standards. Supports a maximum continuous drain current of 120 A with low resistance. Equipped with a TO-263 surface mount package with 3 pins.

Designed for automotive and industrial applications with AEC-Q qualification. Features ultra-low switching losses and avalanche rating. Operating temperature range from -55°C to 175°C. Typical gate charge of 180 nC at Vgs voltage.

Maximum power dissipation of 136 W. RoHS compliant and lead-free plating.

This power transistor is ideal for use in industrial power management, automotive electronics, motor control circuits, and eMobility solutions. It provides efficient switching, high reliability, and compliance with stringent industry standards.

Explore the wide range of Infineon power semiconductors and MOSFETs for enhancing your electronic designs at EnvMart.

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