Infineon HEXFET N-Channel Power MOSFET 50 A 200 V Enhancement Mode 3-Pin TO-247 IRFP260MPBF

Infineon IRFP260MPBF is a HEXFET N-Channel power MOSFET designed for high-efficiency industrial and electronic applications. It features a maximum continuous drain current of 50 A and a maximum drain-source voltage of 200 V, housed in a 3-pin TO-247 package that allows effective thermal dissipation up to 300 W.

This enhancement mode MOSFET utilizes low on-resistance (40 mΩ) to minimize conduction losses and improve overall system efficiency. It supports a wide temperature operating range from -55°C to 175°C, making it suitable for demanding environments in industrial and power electronics.

The device's typical gate charge of 234 nC at a specified gate voltage ensures rapid switching, essential for power control circuits. The robust gate-source voltage rating of ±20 V offers protection against voltage spikes during operation.

Compact physical dimensions (21.1 mm height, 16.13 mm length and 5.2 mm width) allow flexible PCB designs and maintain a small footprint. This MOSFET is ideal for power switching, motor control, power supplies, and other applications requiring high-current and high-voltage N-channel enhancement mode devices.

This power MOSFET uses enhancement mode operation for high efficiency. The TO-247 package enables excellent thermal management for up to 300 W dissipation. Low maximum drain-source resistance reduces conduction losses. Wide operating temperature range supports harsh environments.

Typical gate charge allows fast switching performance. Robust gate-source voltage rating ensures reliable gate control. Compact dimensions support flexible circuit layouts. Suitable for industrial power switching and control applications.

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