World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package BSS138NH6327XTSA2

Free Delivery in India | Lowest Global Shipping Charges

Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package BSS138NH6327XTSA2

Name: Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package BSS138NH6327XTSA2
Brand: Infineon
SKU: 378851
Price: 0.07 USD
Availability: InStock



Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	2.9mm
Model	BSS138NH6327XTSA2
Width	1.3mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	230mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	830mV

Key Features

Compact 3-pin SOT-23 surface-mount package suitable for PCB assembly.
Enhancement mode channel providing controlled switching in circuits.
Maximum continuous drain current of 230 mA for low-power applications.
Maximum drain-source voltage rating of 60 V for intermediate voltage systems.
Maximum drain-source resistance of 6 Ohms to reduce conduction losses.
Typical gate charge of 1 nC allows fast switching with low drive energy.
Operating temperature from -55°C to 150°C ensuring reliable performance in harsh environments.
Power dissipation of 360 mW supports thermal management in compact designs.

Product Description

Infineon BSS138NH6327XTSA2 SIPMOS N-Channel MOSFET is a compact and reliable device designed for low-current switching in surface-mount applications. It features an enhancement mode N-channel transistor capable of handling a maximum continuous drain current of 230 mA and a maximum drain-source voltage of 60 V. Packaged in a 3-pin SOT-23, it is ideal for PCB surface mounting in compact circuits.

The device exhibits a low maximum drain-source resistance of 6 ohms, minimizing conduction loss and improving efficiency in small-signal switching circuits. With a typical gate charge of 1 nC, it supports fast gate transitions with minimal energy consumption. It has a maximum power dissipation rating of 360 mW, aiding thermal management in constrained layout environments.

Designed to operate across a wide temperature range from -55°C to 150°C, this MOSFET is well suited for applications requiring extended thermal tolerance such as automotive sensor signal switching, handheld instrument power management, telematics control logic, and battery-operated load switching.

The BSS138NH6327XTSA2 is AEC-Q101 certified, assuring automotive-grade reliability and quality standards, making it suitable for advanced automotive electronics applications. Compact 3-pin SOT-23 surface mount package for ease of circuit assembly.

Enhanced switching with 230 mA maximum continuous drain current. 60 V maximum drain-source voltage rating for intermediate voltage applications. Low 6 Ω Rds(on) reduces conduction losses in signal circuits. Minimal typical 1 nC gate charge for efficient switching.

Wide operating temperature range from -55 to 150 °C for harsh environments. 360 mW power dissipation to support thermally constrained designs. Automotive AEC-Q101 certification for reliable automotive use.

This MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring efficient low-power switching. Its compact size and thermal tolerance enhance flexibility in design integration.

Explore more MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart for industrial and commercial needs.

Looking to purchase in bulk?

Purchase item in bulk quantity
Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 230 mA, making it suitable for low-power applications.

This MOSFET has a maximum drain-source voltage rating of 60 V, which is suitable for intermediate voltage systems.

It is packaged in a compact 3-pin SOT-23 surface-mount package, ideal for PCB assembly.

The maximum drain-source resistance is 6 ohms, which helps reduce conduction losses in circuits.

The typical gate charge is 1 nC, allowing for fast switching with low drive energy.

This model operates within a temperature range of -55°C to 150°C, ensuring reliable performance in harsh environments.

The maximum power dissipation rating is 360 mW, supporting thermal management in compact designs.

It is AEC-Q101 certified, ensuring automotive-grade reliability and quality standards.

The dimensions are 2.9 mm in length, 1.3 mm in width, and 1 mm in height.

It features an enhancement mode N-channel, which provides controlled switching in circuits.

The maximum gate-source voltage is -20V to +20V, which defines the limits for gate drive signals.

This MOSFET is suitable for applications such as automotive sensor signal switching, handheld instrument power management, and battery-operated load switching.