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Infineon N-Channel IGBT 20 A 600 V 3-Pin TO-263 Surface Mount TrenchStop IGB10N60TATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGB10N60TATMA1 |
| Mount Type | Surface |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 110W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features TrenchStop technology for low saturation voltage.
- Maximum continuous collector current of 20 amperes.
- Maximum collector-emitter voltage of 600 volts.
- Maximum power dissipation of 110 watts supporting high power applications.
- Operates safely between -40°C and 175°C.
- Equipped with a fast switching speed up to 1 MHz for enhanced performance.
- Low turn-off losses and short tail current reduce electromagnetic interference.
- Package type is TO-263, designed for surface mounting on PCBs.
Product Description
Infineon IGB10N60TATMA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) optimized for power semiconductor applications requiring efficient switching and robust current handling capabilities. This transistor supports a maximum continuous collector current of 20 amperes and can withstand a collector-emitter voltage of up to 600 volts. Packaged in a 3-pin TO-263 surface mount case, it offers ease of installation and compatibility with modern PCB designs.
The device features Infineon's proprietary TrenchStop technology, delivering very low collector-emitter saturation voltage (VceSAT) of 2.05 volts, which improves energy efficiency by minimizing conduction losses. With a maximum power dissipation of 110 watts and an operating temperature range from -40°C to 175°C, it is well-suited for demanding industrial, automotive, and power electronics environments.
This IGBT transistor switches at high speeds up to 1 MHz, enabling fast transient response and low turn-off losses. The integrated fast recovery antiparallel diode is beneficial for applications requiring reverse voltage protection. Its design reduces electromagnetic interference through short tail current technology.
Features TrenchStop technology ensuring low saturation voltage. Maximum continuous collector current of 20 A enables robust power handling. Collector-emitter voltage rating of 600 V supports high voltage circuits. Operational temperature range from -40°C to 175°C for harsh environments.
High switching speed of 1 MHz for efficient power conversion. Package type TO-263 designed for surface mounting applications. Maximum gate-emitter voltage of 20 V for safe gate control. Complies with JEDEC quality standards.
Low electromagnetic interference due to short tail current design.
Commonly used in power inverters, motor drives, industrial controls, and automotive electronics, this Infineon IGBT offers reliable performance and energy-saving advantages. Its rugged construction ensures long-term stability in electrically and thermally challenging conditions.
Explore the EnvMart collection for a broad range of semiconductor components including IGBTs and other power management solutions to support your industrial and electronic design requirements.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 20 amperes.
This model has a collector-emitter voltage rating of up to 600 volts.
It operates safely between -40°C and 175°C, making it suitable for harsh environments.
The maximum power dissipation for this model is 110 watts.
This IGBT is packaged in a 3-pin TO-263 surface mount case.
It features Infineon's proprietary TrenchStop technology, which ensures a low collector-emitter saturation voltage of 2.05 volts.
The maximum gate-emitter voltage for this model is 20 volts.
This IGBT can switch at high speeds up to 1 MHz, enabling efficient power conversion.
It complies with JEDEC quality standards.
This IGBT is commonly used in power inverters, motor drives, industrial controls, and automotive electronics.
The TO-263 package of this IGBT has 3 pins.
The country of origin for this IGBT is India.
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