$4.28
$4.15
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel IGBT 30 A 1200 V 3-Pin TO-247 Through Hole IKW15N120H3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW15N120H3FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 217W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Features a maximum continuous collector current of 30 A.
- Supports a maximum collector-emitter voltage of 1200 V.
- Maximum power dissipation rating is 217 W for reliable thermal performance.
- Designed with TrenchStop™ technology for low saturation voltage and fast switching.
- Mount type is through hole for easy PCB assembly and replacement.
- Includes a maximum gate-emitter voltage rating of ±20 V for robust gate control.
- Operates in a temperature range from -40°C to 175°C ensuring wide environmental compatibility.
- Rated with a maximum collector-emitter saturation voltage of 2.05 V to improve efficiency.
Product Description
Infineon IKW15N120H3FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This device features a collector current capability of 30 A and a maximum collector-emitter voltage of 1200 V, packaged in a 3-pin TO-247 casing suitable for through-hole mounting. Incorporating Infineon's TrenchStop™ technology, it delivers very low saturation voltage, reducing conduction losses for increased efficiency.
The IKW15N120H3FKSA1 supports operation within a wide temperature range from -40°C to 175°C, ensuring reliable performance in demanding industrial and electronic environments. It includes an integrated high-speed fast recovery anti-parallel diode, enhancing its switching performance and reducing electromagnetic interference (EMI).
This transistor has a maximum power dissipation rating of 217 W, making it suitable for high power density designs. The maximum gate-emitter voltage rating of ±20 V provides robust control for gate-driving circuitry. Compliance with JEDEC and RoHS standards ensures quality and environmental friendliness. The device is primarily used in industrial automation, power supplies, motor drives, and other applications requiring efficient, rapid switching.
Maximum continuous collector current: 30 A for robust handling of loads. Collector-emitter voltage rating up to 1200 V supports high-voltage applications. TrenchStop Series technology optimizes switching speed and power efficiency.
Package type TO-247 with 3 pins allows through-hole mounting for easy integration. Maximum power dissipation of 217 W facilitates reliable heat management. Wide operating temperature range from -40°C to 175°C enhances device longevity.
Maximum saturation voltage VceSAT of 2.05 V minimizes conduction losses. JEDEC and RoHS compliance ensure reliability and compliance with environmental standards.
Infineon IKW15N120H3FKSA1 is ideal for use in industrial electronics, power management, renewable energy systems, and various applications requiring efficient high current and voltage switching capabilities. Explore the full range of semiconductor and discrete power components in the EnvMart Electronics catalog.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for the IKW15N120H3FKSA1 is 30 A.
This model supports a maximum collector-emitter voltage of 1200 V.
It has a maximum power dissipation rating of 217 W.
The IKW15N120H3FKSA1 is designed with TrenchStop™ technology, which provides low saturation voltage and fast switching capabilities.
This unit operates within a temperature range from -40°C to 175°C.
The maximum gate-emitter voltage rating for this IGBT is ±20 V.
The IKW15N120H3FKSA1 is packaged in a TO-247 type with 3 pins for through-hole mounting.
The maximum collector-emitter saturation voltage (VceSAT) is 2.05 V.
It complies with JEDEC and RoHS standards, ensuring quality and environmental compliance.
This IGBT is primarily used in industrial automation, power supplies, motor drives, and other applications requiring efficient, rapid switching.
It includes an integrated high-speed fast recovery anti-parallel diode, which enhances switching performance and reduces electromagnetic interference (EMI).
The IKW15N120H3FKSA1 has a pin count of 3.
Related Products
$16.85
$16.35
-3%
New
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$23.16
$20.22
-12.7%
New
$4.28
$4.15
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent