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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD042P03L3GATMA1 |
| Width | 5.97mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 131nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
| P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 GBrand | Infineon |
Infineon IPD042P03L3GATMA1 is a P-Channel OptiMOS enhancement-mode power MOSFET designed for demanding surface-mount applications requiring efficient high current switching and robust thermal performance. This device features a 70 A continuous drain current rating and a maximum drain-source voltage of 30 V, provided in a compact and thermally efficient 3-pin TO-252 package.
It offers a low maximum on-resistance of 6.8 mΩ, minimizing conduction losses to boost overall circuit efficiency. The maximum power dissipation rating is 150 W, enabling reliable operation under elevated thermal conditions up to 175°C. The device’s typical gate charge (131 nC) and ±20 V gate-source voltage rating support highly controlled and flexible gate-drive designs for power conversion and load control.
This MOSFET is widely applicable in industrial and commercial electronic circuits, including synchronous rectification in DC-DC converters, high current load switching in power supplies, motor driver circuits requiring low conduction resistance, and battery management and protection systems. The compact surface-mount TO-252 package facilitates dense board layouts and effective thermal-pad implementation.
Key technical parameters such as the forward voltage of -1.1 V and the operational temperature range from -55°C to 175°C make it versatile for high-performance applications in power electronics, including industrial power modules, automotive electronics, and consumer power supplies.
Low 6.8 mΩ drain-source resistance reduces conduction losses for efficient power handling. High 70 A continuous drain current rating supports heavy load switching requirements. 150 W power dissipation rating ensures thermal robustness in demanding environments.
Wide operating temperature from -55°C up to 175°C allows deployment in harsh conditions. Typical gate charge of 131 nC enables stable and predictable switching behaviors. Maximum gate-source voltage rating ±20 V offers flexible gate drive design options.
Compact 3-pin TO-252 surface-mount package facilitates space-saving PCB design and improved cooling. Enhancement mode P-Channel technology ensures efficient control in power conversion circuits.
Explore more from Infineon’s OptiMOS P range and related MOSFETs on EnvMart to power your industrial, laboratory, manufacturing, automotive, and commercial electronic applications with dependable semiconductor solutions.
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