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Infineon OptiMOS P Type P-Channel MOSFET, 70 A Continuous Drain Current, 30 V Drain-Source Voltage, 3-Pin IPD042P03L3GATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPD042P03L3GATMA1
Width 5.97mm
Mount Type Surface
Series OptiMOS P
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 70A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 6.8mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 131nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.1V
P-Channel MOSFET Transistor, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3 GBrand Infineon

Key Features

  • Offers 6.8 mΩ maximum drain-source resistance to reduce conduction losses and improve efficiency.
  • Supports a maximum power dissipation of 150 W allowing sustained thermal handling.
  • Operates reliably over a temperature range of -55°C to 175°C for high-temperature applications.
  • Features typical gate charge of 131 nC for predictable switching behavior.
  • Accommodates gate-source voltages up to ±20 V for flexible gate drive design.
  • Compact TO-252 surface-mount package ideal for compact PCB layouts and thermal-pad routing.
  • Suitable for synchronous rectification, high current load switching, motor drivers, and battery management circuits.
  • Enhancement mode P-type channel ensures controlled gate drive for demanding electronic systems.

Product Description

Infineon IPD042P03L3GATMA1 is a P-Channel OptiMOS enhancement-mode power MOSFET designed for demanding surface-mount applications requiring efficient high current switching and robust thermal performance. This device features a 70 A continuous drain current rating and a maximum drain-source voltage of 30 V, provided in a compact and thermally efficient 3-pin TO-252 package.

It offers a low maximum on-resistance of 6.8 mΩ, minimizing conduction losses to boost overall circuit efficiency. The maximum power dissipation rating is 150 W, enabling reliable operation under elevated thermal conditions up to 175°C. The device’s typical gate charge (131 nC) and ±20 V gate-source voltage rating support highly controlled and flexible gate-drive designs for power conversion and load control.

This MOSFET is widely applicable in industrial and commercial electronic circuits, including synchronous rectification in DC-DC converters, high current load switching in power supplies, motor driver circuits requiring low conduction resistance, and battery management and protection systems. The compact surface-mount TO-252 package facilitates dense board layouts and effective thermal-pad implementation.

Key technical parameters such as the forward voltage of -1.1 V and the operational temperature range from -55°C to 175°C make it versatile for high-performance applications in power electronics, including industrial power modules, automotive electronics, and consumer power supplies.

Low 6.8 mΩ drain-source resistance reduces conduction losses for efficient power handling. High 70 A continuous drain current rating supports heavy load switching requirements. 150 W power dissipation rating ensures thermal robustness in demanding environments.

Wide operating temperature from -55°C up to 175°C allows deployment in harsh conditions. Typical gate charge of 131 nC enables stable and predictable switching behaviors. Maximum gate-source voltage rating ±20 V offers flexible gate drive design options.

Compact 3-pin TO-252 surface-mount package facilitates space-saving PCB design and improved cooling. Enhancement mode P-Channel technology ensures efficient control in power conversion circuits.

Explore more from Infineon’s OptiMOS P range and related MOSFETs on EnvMart to power your industrial, laboratory, manufacturing, automotive, and commercial electronic applications with dependable semiconductor solutions.

Infineon OptiMOS P Type P-Channel MOSFET, 70 A Continuous Drain Current, 30 V Drain-Source Voltage, 3-Pin IPD042P03L3GATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 70 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The maximum power dissipation for this unit is 150 W.

It operates reliably over a temperature range of -55°C to 175°C.

The typical gate charge is 131 nC, which supports predictable switching behavior.

This unit is packaged in a compact 3-pin TO-252 surface-mount configuration.

The maximum gate-source voltage rating is ±20 V, allowing for flexible gate drive design.

It offers a maximum drain-source resistance of 6.8 mΩ, which helps reduce conduction losses.

This model is suitable for synchronous rectification, high current load switching, motor drivers, and battery management circuits.

The forward voltage for this MOSFET is -1.1 V.

The enhancement mode P-Channel technology ensures controlled gate drive for demanding electronic systems, enhancing efficiency in power conversion.

The dimensions of the TO-252 package are 6.73 mm in length, 5.97 mm in width, and 2.41 mm in height.

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