Texas Instruments FemtoFET N-Channel Power MOSFET 30 V 3.1 A Enhancement Mode PICOSTAR Package CSD17381F4T

Texas Instruments model CSD17381F4T is a FemtoFET N-Channel power MOSFET designed for high performance in compact surface mount applications. It supports a maximum continuous drain current of 3.1 A and a maximum drain-source voltage of 30 V, suitable for low-voltage switching and amplification tasks in electronics and power systems.

This MOSFET operates in enhancement mode, enabling controlled conduction when a gate voltage is applied. The device’s surface mount PICOSTAR package with a 3-pin configuration offers a small footprint, valuable for dense PCB layouts and advanced electronics designs.

Key technical parameters include a low maximum drain-source resistance of 250 mΩ which reduces power losses, and a maximum power dissipation rating of 500 mW to handle moderate load conditions efficiently. The gate charge is optimized for quick switching with a typical value of 1.04 nC at Vgs, facilitating high-speed switching applications.

The device is capable of operating in environments ranging from -55°C to 150°C, ensuring durability under industrial and commercial temperature extremes. Voltage tolerance includes a maximum gate-source voltage range from -12 V to +12 V and a forward voltage of 730 mV, making it robust for varied electronic circuit designs.

Physical dimensions are compact at 1.04 mm length, 640 µm width, and 350 µm height, highlighting its suitability for modern microelectronic assemblies.

Common use cases for this MOSFET include power management in electronic devices, switching applications in automotive electronics, industrial control circuits, and other environments requiring reliable discrete semiconductor components.

The MOSFET operates in enhancement mode for efficient switching performance. It features a low maximum drain-source resistance of 250 milliohms. The device has a maximum power dissipation of 500 milliwatts and maximum operating temperature of 150 degrees Celsius.

Designed for surface mount applications with a compact PICOSTAR package footprint. Typical gate charge at Vgs is 1.04 nanocoulombs providing fast switching capability. Includes robust voltage ratings, with maximum gate-source voltage of -12 to +12 volts.

Operating temperature range spans from -55 degrees Celsius to 150 degrees Celsius. Small form factor with dimensions approximately 1.04 mm length, 640 µm width, and 350 µm height.

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