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Infineon OptiMOS P Type P-Channel MOSFET 1.6A 30V Enhancement 3-Pin SOT-23 BSS308PEH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS308PEH6327XTSA1 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.8V |
Key Features
- Low on-resistance of 130 mΩ reduces conduction losses effectively.
- Supports maximum continuous drain current of 1.6 amperes for moderate load applications.
- Maximum drain-source voltage rating of 30 volts suitable for low-voltage switching.
- Typical gate charge of 5 nC enables fast gate switching capability.
- Maximum gate-source voltage rating of ±20 V provides robust drive margins.
- Power dissipation of 500 mW supports efficient thermal management in compact designs.
- Automotive standard compliant with AEC-Q101 for high reliability demands.
- Operating temperature range from -55 °C to 150 °C allows use in harsh environments.
Product Description
Infineon BSS308PEH6327XTSA1 is a high-performance OptiMOS P Type P-Channel MOSFET designed for surface-mount applications. Rated for a maximum continuous drain current of 1.6 A and a drain-source voltage of 30 V, this enhancement mode device offers low conduction losses with a typical drain-source resistance of 130 mΩ. The device’s typical gate charge of 5 nC supports fast switching and efficient drive designs within power management and switching applications.
The SOT-23 package provides a compact footprint measuring 2.9 mm in length, 1.3 mm in width, and 1 mm in height, making it ideal for densely packed electronic assemblies. Its robust operating temperature range from -55 °C up to 150 °C and compliance with the automotive AEC-Q101 standard ensure suitability in automotive and industrial environments requiring high reliability.
Applications include load disconnect in 12 V automotive systems, battery protection circuits, power-path control, and signal-level power switching in compact surface mount boards. The device’s 500 mW power dissipation aids thermal management to maintain performance under load.
Low on-resistance of 130 mΩ reduces conduction losses effectively. Supports maximum continuous drain current of 1.6 amperes for moderate load applications. Maximum drain-source voltage rating of 30 volts suitable for low-voltage switching.
Typical gate charge of 5 nC enables fast gate switching capability. Maximum gate-source voltage rating of ±20 V provides robust drive margins. Power dissipation of 500 mW supports efficient thermal management in compact designs.
Automotive standard compliant with AEC-Q101 for high reliability demands. Operating temperature range from -55 °C to 150 °C allows use in harsh environments. Compact SOT-23 surface mount package with dimensions 2.9 mm length, 1.3 mm width, and 1 mm height.
This MOSFET is an ideal solution for industrial, automotive, and consumer electronic designs requiring efficient P-Channel switching with high reliability. Explore more Infineon semiconductor products and MOSFET options at EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.6 amperes, suitable for moderate load applications.
This MOSFET has a maximum drain-source voltage rating of 30 volts, making it suitable for low-voltage switching applications.
The typical gate charge for this model is 5 nC, which supports fast gate switching capabilities.
The SOT-23 package dimensions are 2.9 mm in length, 1.3 mm in width, and 1 mm in height.
This unit supports a maximum power dissipation of 500 mW, aiding in efficient thermal management.
The operating temperature range for this MOSFET is from -55 °C to 150 °C, allowing use in harsh environments.
Yes, it is compliant with the automotive standard AEC-Q101, ensuring high reliability for automotive applications.
The maximum gate-source voltage rating for this model is ±20 V, providing robust drive margins.
This device features a P-Channel configuration, which is suitable for various switching applications.
It is suitable for applications such as load disconnect in 12 V automotive systems, battery protection circuits, and signal-level power switching.
The typical drain-source resistance is 130 mΩ, which helps reduce conduction losses effectively.
This MOSFET has a pin count of 3, which is typical for SOT-23 packages.
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