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Vishay Silicon Junction Standard Recovery Rectifier Diode 6A 800V 2-Pin P600 GI758-E3/54
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 9.1mm |
| Brand | Vishay |
| Height | 9.1mm |
| Length | 9.1mm |
| Model | GI758-E3/54 |
| Width | 9.1mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | P600 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -50°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 400A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 2.5μs |
| Maximum Forward Current If | 6A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 800V |
Key Features
- Supports a maximum forward current of 6 amperes.
- Maximum peak reverse repetitive voltage of 800 volts.
- Equipped with a fast peak reverse recovery time of 2.5 microseconds.
- Operates reliably within a temperature range of -50°C to 150°C.
- Package type P600 enables through-hole mounting with 2 pins.
- Compact dimensions of 9.1 mm in height, width, length, and diameter.
- Maximum forward voltage drop rated at 1.3 volts for efficient conduction.
- Capable of withstanding peak non-repetitive forward surge currents up to 400 amperes.
Product Description
Vishay GI758-E3/54 is a silicon junction standard recovery rectifier diode designed for robust power electronic applications. This diode supports a maximum forward current of 6 amperes and a peak reverse repetitive voltage of 800 volts, making it suitable for switching and rectification tasks in industrial, electronic, and power supply circuits.
The diode features a fast peak reverse recovery time (trr) of 2.5 microseconds, which reduces switching losses and improves efficiency in high-frequency environments. It is built in a 2-pin, P600 through-hole package, measuring 9.1 mm in height, width, length, and diameter, ensuring compatibility with various circuit boards and assemblies.
Operating temperature ranges from -50°C to 150°C enable reliable function in demanding environmental conditions. The maximum forward voltage drop of 1.3 volts helps minimize power dissipation during conduction, contributing to system efficiency. Additionally, the diode is capable of withstanding peak non-repetitive forward surge currents up to 400 amperes, allowing it to absorb transient surges in power circuits.
These Vishay silicon junction diodes are versatile standard recovery devices widely used in power supplies, industrial electronics, motor drives, and other applications requiring efficient rectification and switching.
Supports a maximum forward current of 6 amperes. Maximum peak reverse repetitive voltage of 800 volts. Fast peak reverse recovery time of 2.5 microseconds reduces losses. Through hole mounting with a P600 2-pin package. Compact dimensions of 9.1 mm in all directions.
Operates over a temperature range of -50°C to 150°C. Maximum forward voltage of 1.3 volts for efficient conduction. Peak non-repetitive forward surge current rating of 400 amperes. Manufactured in China under Vishay quality control standards.
Ideal for use in industrial electronics and power conversion circuits.
This product is categorized under Switching Diodes within the discrete semiconductor segment of electronic components. It is suitable for applications in industrial automation, power electronics, HVAC control systems, manufacturing equipment, and other demanding environments requiring reliable rectifier diodes.
Browse the extensive Vishay product collection and related Switching Diodes on EnvMart for quality semiconductor components.
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Frequently Asked Questions
This model supports a maximum forward current of 6 amperes.
It has a maximum peak reverse repetitive voltage rating of 800 volts.
The diode features a fast peak reverse recovery time of 2.5 microseconds.
The P600 package has compact dimensions of 9.1 mm in height, width, and length.
It operates reliably within a temperature range of -50°C to 150°C.
The maximum forward voltage drop is rated at 1.3 volts.
This diode can withstand peak non-repetitive forward surge currents up to 400 amperes.
It is designed for through-hole mounting with a 2-pin configuration.
The diode configuration is single.
It is widely used in power supplies, industrial electronics, motor drives, and other applications requiring efficient rectification and switching.
This product is manufactured in China under Vishay quality control standards.
This model is categorized as a silicon junction standard recovery diode.
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