ROHM N-Channel MOSFET, 8 A Continuous Drain Current, 40 V Drain Source Voltage, Surface Mount TSMT-8 Package QH8KB6TCR

The ROHM QH8KB6TCR is a high-performance dual N-channel MOSFET that supports a maximum continuous drain current of 8 A and a drain-source voltage up to 40 V. This device is designed specifically for compact surface mount applications featuring the TSMT-8 package, providing excellent thermal performance and efficient power management.

With a channel mode of enhancement, the MOSFET offers low on-resistance at 17.7 milliohms, resulting in reduced conduction losses and improved energy efficiency in electronic circuits. Its capability to operate between a minimum of -55°C and a maximum of 150°C ensures reliable performance across a wide range of industrial environments.

This component is ideal for use in 24 V input factory automation equipment and motor control circuits mounted on base stations. The device accepts a maximum gate-source voltage of 20 V allowing for robust gate drive signals while the typical gate charge of 10.6 nC facilitates high-speed switching, critical in power electronics and switching applications.

Its compact dimensions (3.1 mm length, 0.85 mm width, and 2.9 mm height) make it suitable for space-constrained designs without compromising electrical performance. The power dissipation rating of 1.5 W aligns well with moderate power requirements in various industrial, commercial, and manufacturing equipment.

The device is RoHS compliant and features Pb-free lead plating, making it an environmentally friendly choice. Its small surface mount profile and high reliability make the ROHM QH8KB6TCR an optimal solution for modern electronics requiring durable and efficient MOSFETs.

Supports a maximum continuous drain current of 8 A for stable operation. Features a maximum drain-source voltage of 40 V for rugged performance. Utilizes an enhancement channel mode for efficient switching. Comes in a compact 8-pin TSMT-8 surface mount package.

Has a low on-resistance of 17.7 milliohms to reduce power loss. Capable of operating across a wide temperature range from -55°C to 150°C. Maximum gate-source voltage rating of 20 V allows strong control signals. Typical gate charge of 10.6 nC at Vgs that enables fast switching speeds.

Power dissipation rating of 1.5 W for moderate power applications. Small physical dimensions of 3.1 mm length, 0.85 mm width, and 2.9 mm height.

This MOSFET is well-suited to industrial, manufacturing, automotive electronics, and power management applications. Explore our electronics category for more semiconductor and MOSFET solutions.