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Vishay Silicon Junction Switching Diode, Common Cathode, 250 mA, 70 V, 350 mW Power Dissipation, SOT-23 Package BAV70-E3-08

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Vishay Silicon Junction Switching Diode, Common Cathode, 250 mA, 70 V, 350 mW Power Dissipation, SOT-23 Package BAV70-E3-08

Name: Vishay Silicon Junction Switching Diode, Common Cathode, 250 mA, 70 V, 350 mW Power Dissipation, SOT-23 Package BAV70-E3-08
Brand: Vishay
SKU: 376264
Price: 0.05 USD
Availability: InStock

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Category Switching Diodes Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.05mm
Length	3.1mm
Model	BAV70-E3-08
Width	1.43mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Case	DO-204AL, molded epoxy over glass body
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Polarity	Color band denotes cathode end
Terminals	Matte tin plated leads, solderable per
Pin Count	3
Maximum Power Dissipation Pd	350mW
Diode Configuration	Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	6ns
Maximum Forward Current If	250mA
Maximum Peak Reverse Repetitive Voltage Vrrm	70V

Key Features

Constructed with a superectifier structure ensuring high reliability.
Cavity-free glass-passivated junction offers enhanced durability.
Fast switching capability with typical peak reverse recovery time of 6 ns.
Low leakage current less than 0.2 μA for efficient operation.
High forward surge current capacity of 2 A supports transient loads.
Compact SOT-23 surface mount package with 3 pins.
Maximum forward voltage rating of 1.25 V.
Wide operating temperature range from -55°C to 150°C.

Product Description

Vishay BAV70-E3-08 is a silicon junction switching diode designed with common cathode configuration for fast and reliable switching performance in electronic circuits.

It supports a maximum forward current of 250 mA and a peak reverse voltage rating of 70 V, making it suitable for applications requiring moderate voltage rectification and switching.

The diode features a superectifier structure complemented by a cavity-free glass passivated junction to provide high reliability and low leakage current typically under 0.2 μA. Housed in a compact SOT-23 surface mount package with 3 pins, it is ideal for automated PCB insertion improving production efficiency.

The maximum power dissipation is 350 mW, and it can withstand forward surge currents up to 2 A, allowing robust handling of transient events.

Its fast switching speed, with a peak reverse recovery time of only 6 ns, is well suited to snubber circuits, high voltage rectification in G2 grid CRT and TV applications, and camera flash circuits.

The diode is constructed with matte tin plated leads compatible with J-STD-002 soldering standards and color band marking for easy polarity identification. Operating temperature ranges from -55°C to 150°C extend its usability in diverse industrial and electronic environments.

Country of origin is China. This component does not have automotive standards or additional certifications. Constructed with a superectifier structure ensuring high reliability. Cavity-free glass-passivated junction offers enhanced durability.

Fast switching capability with typical peak reverse recovery time of 6 ns. Low leakage current less than 0.2 μA for efficient operation. High forward surge current capacity of 2 A supports transient loads. Compact SOT-23 surface mount package with 3 pins.

Maximum forward voltage rating of 1.25 V. Wide operating temperature range from -55°C to 150°C. Matte tin plated leads solderable per reliable standards. Color band on diode body denotes cathode polarity. Explore more semiconductor components and Switching Diodes in the Vishay category at EnvMart for your industrial, electronic, and manufacturing projects.