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STMicroelectronics N-Channel IGBT, 80 A 600 V, 3-Pin TO-247 Through Hole STGW40V60DF
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STGW40V60DF |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | V |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead free package |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 283W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- High efficiency and fast switching power semiconductor device.
- Maximum power dissipation of 283 W supports strong thermal management.
- Operates reliably in a temperature range from -55°C to 175°C.
- Designed for industrial, manufacturing, and power control applications.
- Includes a lead-free package compliant with modern RoHS standards.
- Compact dimensions of 20.15mm height, 15.75mm length, and 5.15mm width ensure easy PCB mounting.
- Maximum gate emitter voltage rating of ±20 V enhances gate control stability.
Product Description
STMicroelectronics STGW40V60DF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications requiring efficient switching and control. With a maximum continuous collector current of 80 A and a maximum collector emitter voltage of 600 V, it provides robust performance in demanding electrical environments. The device is housed in a 3-pin TO-247 through hole package, facilitating ease of installation on printed circuit boards.
This IGBT boasts a maximum power dissipation of 283 W, enabling it to handle substantial thermal loads with proper heat sinking. It operates over a wide temperature range from -55°C to 175°C, ensuring reliability in industrial and automotive environments, although it is not certified specifically for automotive standards.
The device combines the advantages of MOSFET gate-drive characteristics with the high-current and low-saturation voltage features of bipolar transistors. Its compact form factor with precise dimensions (20.15 mm height, 15.75 mm length, and 5.15 mm width) allows flexible design implementation.
The maximum gate emitter voltage of ±20 V provides secure gate control to prevent damage and enhance switching performance. The STGW40V60DF comes in a lead-free package compliant with environmental standards, suitable for green manufacturing practices.
High efficiency and fast switching power semiconductor. Robust current and voltage handling capabilities. Wide operating temperature range for industrial applications. Compact TO-247 through hole mounting package. Lead-free compliant package ensuring RoHS adherence.
Suitable for power electronics, industrial drives, and motor control.
This IGBT is ideal for use in industrial automation, power converters, motor drives, and other high power switching applications requiring fast and efficient transistor operation. The device is well suited for manufacturing, HVAC, industrial control, and renewable energy systems.
Explore more IGBT power semiconductors from STMicroelectronics in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for the STGW40V60DF is 80 A.
This model has a maximum collector emitter voltage rating of 600 V.
The dimensions of this IGBT are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
It has a maximum power dissipation of 283 W, allowing it to handle substantial thermal loads with proper heat sinking.
This IGBT operates reliably in a temperature range from -55°C to 175°C.
The STGW40V60DF is housed in a TO-247 package, which is a through hole type.
The maximum gate emitter voltage rating for this model is ±20 V.
This IGBT is suitable for power electronics, industrial drives, motor control, and other high power switching applications.
The STGW40V60DF has a pin count of 3.
Yes, it comes in a lead-free package that is compliant with modern RoHS standards.
It features an N-channel design, which is typical for IGBTs used in high-power applications.
The maximum collector emitter saturation voltage (VceSAT) for this model is 2.3 V.
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