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Vishay Silicon Junction Switching Diode, Single 3 A, 800 V, 2-Pin Through Hole DO-201AD RGP30K-E3/54

Category Switching Diodes Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 5.3mm
Brand Vishay
Height 5.3mm
Length 9.5mm
Model RGP30K-E3/54
Width 5.3mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type DO-201AD
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 125A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 500ns
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 800V

Key Features

  • The diode has a 2-pin, through-hole DO-201AD package type for easy PCB mounting.
  • Maximum forward voltage drop is 1.3 V ensuring efficient power handling.
  • Operating temperature range is wide, from -65°C to 175°C suitable for harsh conditions.
  • Peak non-repetitive forward surge current reaches 125 A for transient loads.
  • Peak reverse recovery time is 500 nanoseconds for fast switching performance.
  • Compact dimensions with 9.5 mm length and 5.3 mm diameter enhance integration in electronic circuits.
  • No automotive standard compliance is indicated.
  • Designed for use in power and switching diode applications across electronic industries.

Product Description

Vishay RGP30K-E3/54 silicon junction switching diode is a single diode designed for through-hole mounting with a DO-201AD package. Rated at 3 A of maximum forward current and an 800 V peak reverse voltage, it is well suited for use in power electronics, switching circuits, and rectification applications. Its construction ensures reliable operation within a temperature range from -65°C to 175°C, allowing usage in demanding environments such as industrial and automotive electronics.

The diode features a low maximum forward voltage of 1.3 V, minimizing power loss during conduction, and a peak non-repetitive surge current capacity of 125 A, ensuring durability under transient overloads. Additionally, the fast recovery time of 500 ns reduces switching losses and improves efficiency in high-frequency applications.

Its standard DO-201AD package, with dimensions of 9.5 mm length and 5.3 mm diameter and width, facilitates easy assembly on through-hole printed circuit boards. While it does not carry specific automotive approvals, it meets industry expectations for robust discrete semiconductors.

The diode has a single-polarity silicon junction design for effective rectification. Rated for forward current up to 3 A and reverse voltage up to 800 V. Fast reverse recovery time enables efficiency in switching applications.

High surge current tolerance of 125 A for transient conditions. Wide operating temperature range from -65°C to 175°C suits diverse environments. Compact DO-201AD package facilitates through-hole PCB mounting. Low forward voltage drop reduces conduction losses.

This switching diode is suitable for industrial electronics manufacturing, power supply units, electronic repair labs, and other commercial electronic component uses. Its reliable performance and form factor support various electronic designs requiring a high-voltage, medium-current diode.

Explore the wide range of Vishay semiconductor components at EnvMart for quality power and Switching Diodes to meet your industrial and laboratory needs.

Vishay Silicon Junction Switching Diode, Single 3 A, 800 V, 2-Pin Through Hole DO-201AD RGP30K-E3/54
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Frequently Asked Questions

The maximum forward current rating of this model is 3 A.

This diode has a peak reverse voltage rating of 800 V.

The peak non-repetitive forward surge current capacity is 125 A.

The maximum forward voltage drop for this diode is 1.3 V.

The operating temperature range is from -65°C to 175°C.

The dimensions of the DO-201AD package are 9.5 mm in length and 5.3 mm in diameter.

The peak reverse recovery time is 500 nanoseconds, which contributes to fast switching performance and reduces switching losses in high-frequency applications.

This diode is designed for through-hole mounting.

This model is suitable for power electronics, switching circuits, and rectification applications across various electronic industries.

The diode configuration is single, allowing for effective rectification in circuits.

The country of origin for this diode is India.

This diode is a silicon junction type, designed for reliable operation in various electronic applications.

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