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ROHM Type N, Type P-Channel MOSFET 7 A Continuous Drain Current 60 V Drain Source Voltage 8-Pin SOP SH8MC5TB1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 5.2mm |
| Length | 4.05mm |
| Model | SH8MC5TB1 |
| Width | 1.75mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type N and Type P-Channel MOSFETs integrated in a single 8-pin SOP package.
- Maximum continuous drain current of 7 amperes for efficient switching applications.
- Maximum drain-to-source voltage rating of 60 volts ensuring robust operation.
- Low drain-source resistance of 33 milliohms to reduce power loss.
- Enhancement-type channel mode for reliable switching performance.
- Typical gate charge of 7.6 nanocoulombs at gate-source voltage.
- Pin count of 8 with surface mount SOP packaging.
- Operating temperature range from -55°C to 150°C for diverse environments.
Product Description
ROHM SH8MC5TB1 Type N, Type P-Channel MOSFET is a dual configuration MOSFET offering 7 A maximum continuous drain current and a maximum drain source voltage of 60 V, housed in a compact 8-pin SOP surface-mounted package. Designed for switching applications, this enhancement-mode device provides low on-resistance with a maximum of 33 milliohms, enabling highly efficient power switching and control.
The device features typical gate charge of 7.6 nanocoulombs at rated gate-source voltage, with a maximum gate-source voltage of 20 V ensuring robust gate protection. Its power dissipation rating of 2 W and extended operating temperature range from -55°C to 150°C make it suitable for demanding industrial and automotive electronics environments.
Physically, the SH8MC5TB1 is compact with a length of 4.05 mm, width of 1.75 mm, and height of 5.2 mm, fitting well into space-constrained PCB layouts. The surface mount SOP package allows easy assembly and high-density mounting.
Key features of this MOSFET include its dual N and P-Channel types integrated into a single package, low forward voltage of 1.2 V, and suitability for applications including power management, motor control, and computer peripheral devices.
Type N and Type P-Channel MOSFETs integrated in one SO-8 package. Low on-resistance ensures energy-efficient switching. Wide operating temperature range suitable for automotive and industrial use. Compact SOP surface mount package suitable for high-density boards.
Robust electrical characteristics including 7 A continuous current and 60 V voltage handling. Enhancement channel mode enabling precision control.
This ROHM MOSFET is ideal for electronic components, power & connectors, semiconductor discrete semiconductor applications in industrial, automotive, manufacturing, and consumer electronics sectors. For further PCB and 3D mechanical design integration, download compatible 3D models and schematics provided by ROHM.
Browse the Electronics & Electricals category on EnvMart for more advanced semiconductor and MOSFET products to fit your industrial needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 7 amperes.
It has a maximum drain-source voltage rating of 60 volts.
The maximum drain-source resistance is 33 milliohms, which helps reduce power loss during operation.
The operating temperature range is from -55°C to 150°C, making it suitable for diverse environments.
The typical gate charge is 7.6 nanocoulombs at the rated gate-source voltage.
It comes in an 8-pin SOP (Small Outline Package) surface mount package.
The dimensions are 4.05 mm in length, 1.75 mm in width, and 5.2 mm in height.
This model integrates both Type N and Type P-channel MOSFETs in a single package.
The maximum power dissipation rating for this device is 2 watts.
The maximum gate-source voltage is 20 volts, providing robust gate protection.
This MOSFET is suitable for applications including power management, motor control, and computer peripheral devices.
The country of origin for this MOSFET is India.
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