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Vishay Silicon Junction Switching Diode, Single, 3 A Forward Current, 600 V Reverse Voltage, DO-201AD Package GI506-E3/54

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Vishay Silicon Junction Switching Diode, Single, 3 A Forward Current, 600 V Reverse Voltage, DO-201AD Package GI506-E3/54

Name: Vishay Silicon Junction Switching Diode, Single, 3 A Forward Current, 600 V Reverse Voltage, DO-201AD Package GI506-E3/54
Brand: Vishay
SKU: 375564
Price: 0.43 USD
Availability: InStock

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Category Switching Diodes Brand Vishay Condition New

Specifications

Country of Origin	China
Diameter	5.3mm
Brand	Vishay
Height	5.3mm
Length	9.5mm
Model	GI506-E3/54
Width	5.3mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	DO-201AD
Sub Type	Silicon Junction
Minimum Operating Temperature	-50°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	100A
Maximum Forward Voltage Vf	1.1V
Peak Reverse Recovery Time trr	2μs
Maximum Forward Current If	3A
Maximum Peak Reverse Repetitive Voltage Vrrm	600V
onsemi 600 V 3 A Diode General Purpose 2-Pin DO-201ADBrand	onsemi

Key Features

Supports maximum forward current of 3 amperes.
Operates with a peak reverse repetitive voltage of 600 volts.
Features a maximum forward voltage drop of 1.1 volts.
Compact DO-201AD epoxy package with 2 pins for mounting.
Fast reverse recovery time of 2 microseconds aids switching performance.
Wide operating temperature range from -50°C to 150°C.
Withstands surge currents up to 100 amperes.
Compact dimensions optimize PCB space usage.

Product Description

Vishay GI506-E3/54 is a single silicon junction switching diode supplied in a DO-201AD package suitable for through-hole mounting. It supports a forward current of up to 3 amperes and can withstand a reverse voltage of 600 volts, making it ideal for applications requiring robust rectification and switching.

The diode exhibits a maximum forward voltage drop of 1.1 volts, contributing to high efficiency and low power loss during operation. It has a peak reverse recovery time of 2 microseconds, allowing for fast switching in power electronic circuits. This makes the GI506-E3/54 suitable for use in power supplies, inverters, and other semiconductor switching devices.

Designed to operate reliably in harsh environments, it performs consistently across a wide temperature range from -50°C up to 150°C. It can also tolerate transient surge currents up to 100 amperes, ensuring resilience against inrush current conditions.

The physical package dimensions are a length of 9.5 mm and a diameter of 5.3 mm, presenting a compact form factor in the DO-201AD through-hole configuration for ease of installation and PCB layout compatibility.

This diode is manufactured in China and does not have specific certifications or automotive standards. It finds widespread use in industrial, electronics manufacturing, and laboratory applications requiring standard recovery power diodes with reliable silicon junction technology.

Supports maximum forward current of 3 amperes. Operates with a peak reverse repetitive voltage of 600 volts. Features a maximum forward voltage drop of 1.1 volts. Compact DO-201AD epoxy package with 2 pins for mounting. Fast reverse recovery time of 2 microseconds aids switching performance.

Wide operating temperature range from -50°C to 150°C. Withstands surge currents up to 100 amperes. Compact dimensions optimize PCB space usage.

This Vishay silicon junction diode GI506-E3/54 is categorized under Switching Diodes by EnvMart, ideal for electronics manufacturing and power management applications. Browse our comprehensive range of diodes and discrete semiconductors for more options.