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onsemi Silicon Junction Switching Diode, Single Diode, 1 A Forward Current, 600 V Reverse Voltage, Surface Mount S1J

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.2mm
Length 4.75mm
Model S1J
Width 2.95mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AC
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Power Dissipation Pd 1.4W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 3ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • The diode features a maximum forward current rating of 1 ampere.
  • It offers a peak reverse repetitive voltage of 600 volts.
  • Surface mount type with DO-214AC package ensures compact PCB integration.
  • Operates efficiently within a temperature range from -55°C to 150°C.
  • Has a peak non-repetitive forward surge current rating of 30 amperes.
  • Maximum forward voltage drop is 1.1 volts for enhanced performance.
  • Power dissipation capability of 1.4 watts to support moderate loads.
  • Extremely fast peak reverse recovery time of 3 nanoseconds reduces switching losses.

Product Description

onsemi S1J Silicon Junction Switching Diode is designed to provide reliable rectification and switching performance in electronic circuits. This single diode features a compact DO-214AC surface mount package, enabling space-efficient board layouts in modern electronic designs.

Rated for a maximum forward current of 1 ampere and a peak reverse voltage of 600 volts, the diode supports robust operation in power supply and signal rectification applications. Its fast 3-nanosecond peak reverse recovery time helps minimize switching losses, making it suitable for high-frequency switching circuits.

The diode performs reliably over a wide temperature range from -55 degrees Celsius to 150 degrees Celsius, allowing deployment in harsh industrial and automotive environments without degradation.

Physical dimensions including a 4.75 mm length, 2.95 mm width, and 2.2 mm height ensure compatibility with compact PCB footprints in power electronics and discrete semiconductor modules.

Typical industrial applications include power rectification, switching diodes for power supplies, electronic appliances, and signal conditioning. onsemi Silicon Junction diodes like the S1J model are widely employed in semiconductor discrete device assemblies for durable and efficient electronic component solutions.

The diode features a maximum forward current rating of 1 ampere. It offers a peak reverse repetitive voltage of 600 volts. Surface mount type with DO-214AC package ensures compact PCB integration. Operates efficiently within a temperature range from -55°C to 150°C.

Has a peak non-repetitive forward surge current rating of 30 amperes. Maximum forward voltage drop is 1.1 volts for enhanced performance. Power dissipation capability of 1.4 watts to support moderate loads. Extremely fast peak reverse recovery time of 3 nanoseconds reduces switching losses.

Compact physical dimensions: length 4.75 mm, width 2.95 mm, height 2.2 mm. Suitable for use in rectifier circuits, electronic power supplies, and signal processing. Explore more quality Switching Diodes and semiconductor components at EnvMart for your industrial, laboratory, electronic manufacturing, and research needs.

onsemi Silicon Junction Switching Diode, Single Diode, 1 A Forward Current, 600 V Reverse Voltage, Surface Mount S1J
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Frequently Asked Questions

The maximum forward current rating of this diode is 1 ampere.

This model has a peak reverse repetitive voltage of 600 volts.

The physical dimensions of the S1J diode are 4.75 mm in length, 2.95 mm in width, and 2.2 mm in height.

It comes in a DO-214AC surface mount package, which allows for compact PCB integration.

The diode operates efficiently within a temperature range from -55°C to 150°C.

The peak non-repetitive forward surge current rating is 30 amperes.

The maximum power dissipation capability is 1.4 watts.

The maximum forward voltage drop is 1.1 volts.

This diode features an extremely fast peak reverse recovery time of 3 nanoseconds.

The S1J diode has a pin count of 2.

This diode is suitable for power rectification, switching diodes for power supplies, electronic appliances, and signal conditioning.

The country of origin for this diode is India.

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