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Vishay Silicon Junction Switching Diode, Single, 8 A, 2-Pin, 100 V, TO-220 Package FES8BT-E3/45
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 15.32mm |
| Length | 10.54mm |
| Model | FES8BT-E3/45 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 125A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 8A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
Key Features
- The diode features a single silicon junction and 2-pin configuration suitable for through-hole mounting.
- It supports a maximum forward current (If) of 8 A and a peak non-repetitive forward surge current (Ifsm) of 125 A.
- The maximum peak reverse repetitive voltage (Vrrm) is rated at 100 V, ensuring reliable blocking voltage.
- It operates efficiently at a maximum forward voltage drop (Vf) of 950 mV and fast peak reverse recovery time (trr) of 35 ns.
- Designed to operate within temperature ranges from -55°C to 150°C for industrial applications.
- The compact TO-220 package measures 10.54 mm in length, 15.32 mm in height, and 4.7 mm in width.
- Ideal for use in switched mode power supplies, inverters, and freewheeling diode applications in electronics and electrical equipment.
Product Description
Vishay FES8BT-E3/45 is a Silicon Junction Switching Diode designed for power and switching applications. It is a single diode with an 8 A maximum forward current and a peak reverse voltage of 100 V, housed in the TO-220 package with 2 pins suitable for through-hole mounting.
This diode features a fast peak reverse recovery time of 35 ns and a maximum forward voltage of 950 mV, allowing high efficiency in power rectification and switching tasks. It withstands surge currents up to 125 A and operates over a wide temperature range from -55°C to 150°C, making it robust for demanding electronic environments.
The physical dimensions of the device are 10.54 mm length, 15.32 mm height, and 4.7 mm width, designed to fit compact circuit board layouts. It is well-suited for use in switched-mode power supplies (SMPS), inverters, and freewheeling diode circuits.
It is intended for industrial, electronics manufacturing, and power supply sectors requiring efficient switching diodes. The diode features a single silicon junction and 2-pin configuration suitable for through-hole mounting.
Supports a maximum forward current of 8 A and a peak non-repetitive forward surge current of 125 A. Maximum peak reverse repetitive voltage of 100 V ensures reliable blocking voltage. Fast peak reverse recovery time of 35 ns minimizes switching losses.
Operating temperature range from -55°C to 150°C for durability in harsh environments. Compact TO-220 package dimensions: 10.54 mm length, 15.32 mm height, and 4.7 mm width. Ideal for switched mode power supplies, inverters, and freewheeling diode applications.
Explore Vishay semiconductor products and Switching Diodes at EnvMart for reliable power component solutions tailored to electronics and industrial needs.
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Frequently Asked Questions
The maximum forward current (If) rating of this diode is 8 A.
This model has a maximum peak reverse repetitive voltage (Vrrm) rating of 100 V.
It can handle a peak non-repetitive forward surge current (Ifsm) of 125 A.
The TO-220 package measures 10.54 mm in length, 15.32 mm in height, and 4.7 mm in width.
The diode operates within a temperature range from -55°C to 150°C.
The maximum forward voltage drop (Vf) is rated at 950 mV.
The peak reverse recovery time (trr) for this model is 35 ns.
This diode supports through-hole mounting due to its 2-pin configuration.
It is typically used in switched mode power supplies, inverters, and freewheeling diode applications.
This model features a single diode configuration.
The country of origin for this diode is China.
This diode is classified as a silicon junction switching diode.
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