World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

onsemi PowerTrench Type P-Channel MOSFET 4 A 20 V Enhancement 6-Pin SOT-23 FDC642P

Free Delivery in India | Lowest Global Shipping Charges

onsemi PowerTrench Type P-Channel MOSFET 4 A 20 V Enhancement 6-Pin SOT-23 FDC642P

Name: onsemi PowerTrench Type P-Channel MOSFET 4 A 20 V Enhancement 6-Pin SOT-23 FDC642P
Brand: onsemi
SKU: 374980
Price: 20.22 USD
Availability: InStock



Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	3mm
Model	FDC642P
Width	1.7mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	6
Channel Type	Type P
Maximum Continuous Drain Current Id	4A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	100mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.6W
Typical Gate Charge Qg @ Vgs	11nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET operates in enhancement mode providing efficient switching capabilities.
It features a maximum power dissipation of 1.6 W suitable for moderate thermal loads.
Capable of functioning in a wide temperature range from -55°C to 150°C for robust applications.
Compact SOT-23 package with dimensions 3mm length, 1.7mm width, and 1mm height enables space-saving circuit designs.
The device has a low maximum drain source resistance of 100 milliohms ensuring low conduction losses.
Gate voltage tolerance extends from -12 V to +12 V providing flexibility in control circuit designs.
Typical gate charge of 11 nanocoulombs ensures fast switching performance.

Product Description

onsemi FDC642P is a PowerTrench type P-Channel MOSFET designed for electronic applications requiring efficient switching and power management. This enhancement-mode transistor supports a maximum continuous drain current of 4 A and a maximum drain source voltage of 20 V, making it ideal for low-voltage power regulation and amplification tasks.

The device comes in a compact 6-pin SOT-23 surface-mount package which offers a small footprint with dimensions of 3mm length, 1.7mm width, and 1mm height, suitable for space-constrained designs and advanced PCB layouts.

It has a maximum power dissipation rating of 1.6 W, allowing it to handle significant power within thermal limits, and operates reliably across an industrial temperature range from -55°C up to 150°C, enabling use in harsh and demanding environments such as automotive, industrial automation, and consumer electronics.

Featuring a low maximum drain source resistance (Rds) of 100 milliohms, the FDC642P ensures low conduction losses and efficient operation. The wide gate source voltage range from -12 to +12 V allows for flexible drive schemes compatible with various control circuits.

The MOSFET's typical gate charge is 11 nC at Vgs conditions, facilitating fast switching transitions essential for power switching and pulse width modulation applications.

This device does not carry automotive-specific standards approvals and is positioned for general industrial and electronic component usage. It is a reliable choice for designers looking to achieve efficient power control in compact circuit designs.

This P-Channel MOSFET is optimized for surface mount applications in industrial and consumer electronics. Compact 6-pin SOT-23 package facilitates efficient PCB space usage. Wide operating temperature range ensures device reliability under harsh conditions.

Low on-resistance minimizes power losses and enhances efficiency. High gate voltage tolerance allows for versatile gate drive options. Typical gate charge enables rapid switching suitable for power management. Explore the Electronics & Electricals > Discrete Semiconductors > MOSFET category at EnvMart for a broad selection of power transistors and associated components.