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onsemi Power PNP Bipolar Transistor 7A Maximum Collector Current 100V Maximum Collector Emitter Voltage TO-220 KSA1010YTU

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onsemi Power PNP Bipolar Transistor 7A Maximum Collector Current 100V Maximum Collector Emitter Voltage TO-220 KSA1010YTU

Name: onsemi Power PNP Bipolar Transistor 7A Maximum Collector Current 100V Maximum Collector Emitter Voltage TO-220 KSA1010YTU
Brand: onsemi
SKU: 374421
Price: 0.88 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	29.03mm
Length	10.67mm
Model	KSA1010YTU
Width	4.7mm
Mount Type	Through Hole
Series	KSA1010
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Maximum Collector Emitter Voltage Vceo	100V
Minimum DC Current Gain hFE	20
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-7V
Maximum Collector Base Voltage VCBO	-100V
Maximum Power Dissipation Pd	40W
Maximum DC Collector Current Idc	7A
Transistor Configuration	Single

Key Features

Maximum DC collector current of 7 amperes ensures robust power handling capacity.
Maximum collector emitter voltage rated at 100 volts for diverse circuit applications.
Feature a 3-pin TO-220 package with single transistor configuration for easy mounting.
High power dissipation capability of 40 watts supports demanding operating conditions.
Operates reliably up to 150°C maximum operating temperature for industrial uses.
Minimum DC current gain (hFE) of 20 provides efficient amplification in circuits.
Designed with PNP polarity suitable for various power transistor applications.
Compact dimensions with height 29.03 mm, length 10.67 mm, and width 4.7 mm enable integration in tight spaces.

Product Description

onsemi KSA1010YTU is a high-performance power PNP bipolar junction transistor designed for through hole mounting in a TO-220 package. It provides a maximum DC collector current of 7 amperes and a maximum collector emitter voltage of 100 volts, making it suitable for various industrial and electronic circuit applications requiring reliable power control and amplification.

This transistor offers a power dissipation rating of 40 watts and can operate safely up to 150°C, ensuring durability under high thermal and electrical stress. The transistor has a minimum current gain (hFE) of 20 which supports efficient switching and amplification performance in electronic devices.

The single transistor configuration with three pins allows straightforward integration in PCB designs. Its compact physical dimensions of 29.03 mm height, 10.67 mm length, and 4.7 mm width help in space-constrained applications.

Key electrical characteristics include a maximum collector base voltage (VCBO) of -100 volts and maximum emitter base voltage (VEBO) of -7 volts, providing safe operating margins in power circuits. The device lacks automotive standard certification but is optimized for high reliability in general electronics manufacturing.

Maximum DC collector current: 7 A. Maximum collector emitter voltage: 100 V. Package type: TO-220, through hole mount. Power dissipation: 40 W. Maximum operating temperature: 150°C. Minimum DC current gain (hFE): 20. Pin count: 3.

Dimensions: 29.03 mm (H) x 10.67 mm (L) x 4.7 mm (W).

This transistor is widely used in industrial electronics, power supply designs, amplification circuits, and other power-related semiconductor applications. Its dependable performance and specified ratings make it an excellent component for manufacturing and laboratory use.

Explore the range of semiconductor products in the EnvMart catalog for reliable electronic components that fit diverse industrial and commercial requirements.

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