onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V, Enhancement Mode, 3-Pin TO-252 Package FDD6685

onsemi FDD6685 PowerTrench Type P-Channel MOSFET is engineered for high efficiency power switching with a continuous drain current of 11 A and a maximum drain source voltage of 30 V. Designed in a compact 3-pin TO-252 surface mount package, this MOSFET is suitable for various industrial, automotive, and commercial electronic applications.

The device utilizes onsemi's advanced PowerTrench technology with a shielded-gate structure to enhance charge balance, thereby improving the figure of merit and reducing switching losses. Its low maximum drain source resistance (30mΩ) minimizes conduction losses, contributing to improved system efficiency and power density.

The FDD6685 supports a wide temperature operation from -55°C up to 175°C, ensuring reliable performance even in demanding environments. Its typical gate charge of 17 nC allows for effective switching with reduced gate drive power. The device also includes a soft reverse recovery body diode, which enables fast switching and can eliminate the need for additional snubber circuits.

This MOSFET is compliant with automotive standard AEC-Q101, making it suitable for automotive electronic systems requiring stringent reliability standards. Its power dissipation rating of 52 W supports applications needing substantial power handling capabilities.

Key features include the enhancement mode operation, the surface mount TO-252 package with precise dimensions (height 2.39 mm, width 6.22 mm, length 6.73 mm), and a maximum gate source voltage rating of -25 V to +25 V. The forward voltage drop is -1.2 V, balancing efficiency and voltage handling.

Offers a maximum continuous drain current of 11 amperes for high load applications. Maximum drain source voltage rating of 30 volts ensures reliable operation under moderate voltage conditions. Features low maximum drain source resistance of 30 milliohms for reduced conduction losses.

Supports a wide operating temperature range from -55°C to 175°C for robust industrial performance. Utilizes a surface mount TO-252 package with 3 pins for easy PCB integration. Power dissipation capability of up to 52 watts supports high power density designs.

Incorporates a shielded-gate PowerTrench structure for enhanced efficiency and fast switching. Typical gate charge is 17 nanocoulombs at Vgs, facilitating lower gate drive losses. Complies with automotive standard AEC-Q101 for automotive-grade reliability.

Soft body diode reduces the need for external snubber circuits in synchronous rectification.

This MOSFET is ideal for use in power management in industrial equipment, automotive electronics, power supply circuits, and other electronic devices demanding efficient and reliable switching performance. The product enhances system efficiency, power density, and thermal management while reducing overall energy consumption.

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