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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC654P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
onsemi FDC654P PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor designed for surface mount applications. It features an enhancement-mode P-channel channel with a maximum continuous drain current of 3.6 amperes and a maximum drain-source voltage rating of 30 volts. This device is housed in a compact 6-pin SOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1 mm height, making it suitable for high-density PCB layouts.
The advanced PowerTrench technology utilized in this MOSFET improves system efficiency and power density by combining a low gate charge and soft reverse recovery body diode for fast switching in AC/DC power supplies and synchronous rectification designs. The device’s maximum drain-source resistance of 125 milliohms reduces conduction losses, enhancing energy efficiency.
Operating within a wide temperature range from -55°C to 150°C, the FDC654P MOSFET ensures reliable operation under harsh industrial and automotive environments, although it is not certified for automotive standards. The typical gate charge of 6.2 nC allows for rapid switching suitable for power management ICs and other semiconductor applications.
This MOSFET delivers a maximum power dissipation of 1.6 watts, supporting effective thermal management in compact electronic assemblies. The device also features a maximum gate-source voltage tolerance of ±20 volts and a forward voltage of -1.2 volts, making it highly versatile for various power switching uses.
Ideal applications include industrial power supplies, consumer electronics, power management circuits, and other electrical devices requiring efficient and compact P-channel MOSFET switches. Its surface mount form factor and robust electrical characteristics make it a preferred choice for engineers designing power-sensitive and space-constrained circuits.
Set includes one onsemi FDC654P MOSFET device as specified. Browse more MOSFETs and power semiconductors in the Electronics & Electricals category at EnvMart for optimized solutions to your circuit design needs.
PowerTrench technology delivers improved system efficiency and power density. 6-pin SOT-23 package enables compact PCB integration. 3.6 A continuous drain current supports demanding loads. 30 V maximum drain-source voltage rating ensures versatility.
Low 125 milliohm Rds(on) reduces conduction losses. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 6.2 nC promotes fast switching. Maximum power dissipation of 1.6 W for thermal reliability.
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