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onsemi PowerTrench Type P-Channel MOSFET 3.6 A 30 V Enhancement 6-Pin SOT-23 FDC654P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model FDC654P
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 3.6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 125mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 6.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • PowerTrench technology provides enhanced system efficiency and power density.
  • 6-pin SOT-23 surface mount package ensures easy PCB integration.
  • Maximum drain-source resistance of 125 milliohms for low conduction loss.
  • Enhanced channel mode for reliable switching performance.
  • Operates within temperature ranges from -55°C to 150°C.
  • Typical gate charge of 6.2 nC enabling fast switching speeds.
  • Maximum power dissipation of 1.6 W suitable for power management circuits.

Product Description

onsemi FDC654P PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor designed for surface mount applications. It features an enhancement-mode P-channel channel with a maximum continuous drain current of 3.6 amperes and a maximum drain-source voltage rating of 30 volts. This device is housed in a compact 6-pin SOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1 mm height, making it suitable for high-density PCB layouts.

The advanced PowerTrench technology utilized in this MOSFET improves system efficiency and power density by combining a low gate charge and soft reverse recovery body diode for fast switching in AC/DC power supplies and synchronous rectification designs. The device’s maximum drain-source resistance of 125 milliohms reduces conduction losses, enhancing energy efficiency.

Operating within a wide temperature range from -55°C to 150°C, the FDC654P MOSFET ensures reliable operation under harsh industrial and automotive environments, although it is not certified for automotive standards. The typical gate charge of 6.2 nC allows for rapid switching suitable for power management ICs and other semiconductor applications.

This MOSFET delivers a maximum power dissipation of 1.6 watts, supporting effective thermal management in compact electronic assemblies. The device also features a maximum gate-source voltage tolerance of ±20 volts and a forward voltage of -1.2 volts, making it highly versatile for various power switching uses.

Ideal applications include industrial power supplies, consumer electronics, power management circuits, and other electrical devices requiring efficient and compact P-channel MOSFET switches. Its surface mount form factor and robust electrical characteristics make it a preferred choice for engineers designing power-sensitive and space-constrained circuits.

Set includes one onsemi FDC654P MOSFET device as specified. Browse more MOSFETs and power semiconductors in the Electronics & Electricals category at EnvMart for optimized solutions to your circuit design needs.

PowerTrench technology delivers improved system efficiency and power density. 6-pin SOT-23 package enables compact PCB integration. 3.6 A continuous drain current supports demanding loads. 30 V maximum drain-source voltage rating ensures versatility.

Low 125 milliohm Rds(on) reduces conduction losses. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 6.2 nC promotes fast switching. Maximum power dissipation of 1.6 W for thermal reliability.

onsemi PowerTrench Type P-Channel MOSFET 3.6 A 30 V Enhancement 6-Pin SOT-23 FDC654P
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Frequently Asked Questions

The maximum continuous drain current of this model is 3.6 amperes.

It has a maximum drain-source voltage rating of 30 volts.

This unit has dimensions of 3 mm in length, 1.7 mm in width, and 1 mm in height.

The maximum power dissipation is 1.6 watts, suitable for effective thermal management.

The typical gate charge is 6.2 nC, enabling fast switching speeds.

It features a maximum drain-source resistance of 125 milliohms, which reduces conduction losses.

This model operates within a temperature range from -55°C to 150°C.

It uses an enhancement-mode P-channel configuration.

The forward voltage is -1.2 volts.

The maximum gate-source voltage tolerance is ±20 volts.

It is designed for surface mounting.

It is suitable for applications such as industrial power supplies, consumer electronics, and power management circuits.

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