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onsemi UltraFET N-Channel MOSFET, 33 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode HUF76423P3
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | HUF76423P3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | UltraFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 38mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.25V |
Key Features
- The device features low on-resistance for efficient power conversion.
- Optimized for high frequency operation with low gate charge.
- Supports through-hole mounting with standard TO-220 form factor.
- Suitable for applications such as switching regulators and motor drivers.
- Operates reliably in a wide temperature range from -55°C to 175°C.
- Maximum power dissipation rating of 85 W enables robust thermal management.
- Low forward voltage ensures minimal conduction losses.
- Gate source voltage tolerance of ±16 V enhances circuit protection.
Product Description
onsemi HUF76423P3 is an UltraFET N-Channel MOSFET designed for high-efficiency power conversion with a continuous drain current rating of 33 A and a drain source voltage maximum of 60 V. This enhancement mode transistor comes in a 3-pin TO-220 package suitable for through-hole mounting.
This MOSFET utilizes UltraFET® trench technology to achieve very low RDS(on) resistance of 38 milliohms, combined with low typical gate charge of 28 nC, enabling efficient switching at high frequencies. Its diode demonstrates low reverse recovery time and stored charge, further optimizing performance in power conversion circuits.
The device is rated for a maximum power dissipation of 85 W and can operate safely in environments ranging from -55°C to 175°C. The tolerance to gate source voltage up to ±16 V enhances reliability in demanding applications.
Compact physical dimensions and TO-220 package make it compatible with various industrial uses such as DC-DC converters, switching regulators, motor driver circuits, and low-voltage bus switches.
Reliable semiconductor choice for industrial, commercial, electronic component, and power management applications where efficiency and thermal management are critical. The device features low on-resistance for efficient power conversion.
Optimized for high frequency operation with low gate charge. Supports through-hole mounting with standard TO-220 form factor. Suitable for applications such as switching regulators and motor drivers. Operates reliably in a wide temperature range from -55°C to 175°C.
Maximum power dissipation rating of 85 W enables robust thermal management. Low forward voltage ensures minimal conduction losses. Gate source voltage tolerance of ±16 V enhances circuit protection. Compact dimensions of 16.3 mm height, 10.67 mm length, and 4.7 mm width.
Explore our full range of MOSFET components at EnvMart for industrial and commercial electronic assembly needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33 A.
It can handle a maximum drain-source voltage of 60 V.
The typical gate charge is 28 nC at Vgs.
The maximum drain-source resistance (RDS(on)) is 38 milliohms.
It operates reliably in a temperature range from -55°C to 175°C.
This device supports through-hole mounting with a standard TO-220 form factor.
The maximum power dissipation rating is 85 W.
The forward voltage is 1.25 V.
The dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width.
The gate-source voltage tolerance is ±16 V.
It is suitable for applications such as switching regulators and motor drivers.
It utilizes UltraFET® trench technology to achieve low on-resistance and efficient power conversion.
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