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onsemi UltraFET N-Channel MOSFET 75 A 55 V Enhancement Mode 3-Pin TO-220 HUF75345P3
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | HUF75345P3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | UltraFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 325W |
| Typical Gate Charge Qg @ Vgs | 220nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- This MOSFET offers a maximum continuous drain current of 75 A.
- The device features a maximum drain-source voltage of 55 V for robust switching.
- UltraFET series ensures very low Rds(on) of 7 mΩ for efficient power handling.
- Maximum power dissipation capability is up to 325 W for demanding applications.
- It operates in an enhancement mode with a typical gate charge of 220 nC at Vgs.
- Designed for high-frequency power conversion with low forward voltage of 1.25 V.
- Thermal operating range spans from -55°C to a maximum of 175°C.
- Package dimensions are 16.3 mm height, 10.67 mm length, and 4.7 mm width.
Product Description
onsemi HUF75345P3 UltraFET N-Channel MOSFET is a power semiconductor device engineered to provide high efficiency and reliability in switching applications. It features a maximum continuous drain current of 75 A and maximum drain-source voltage of 55 V in a standard 3-pin TO-220 package suitable for through-hole mount.
The UltraFET® technology combines low Rds(on) resistance of 7 mΩ with a maximum power dissipation rating of 325 W, allowing for high power handling in compact form factors. Its enhancement mode operation and typical gate charge of 220 nC at Vgs support rapid switching suitable for high-frequency DC to DC converters, switching regulators, motor drivers, and power management circuits.
Thermal performance is assured with an operating temperature range of -55°C minimum up to 175°C maximum, supporting durability in demanding industrial and commercial environments.
Package dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width, making it compatible with through-hole mounting techniques. Its low forward voltage of 1.25 V minimizes conduction losses, enhancing system efficiency.
This MOSFET supports applications in power conversion, motor control, and energy management. Its low reverse recovery time diode characteristic reduces switching losses. Operating voltage and current ratings make it suitable for battery management and power supplies.
Robust package ensures ease of integration and effective thermal management.
The onsemi HUF75345P3 offers technological advantages through UltraFET® Trench MOSFET design targeting superior efficiency in power electronics. Explore a broad array of semiconductor solutions including MOSFETs for industrial, electronic, and automotive applications at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A.
It has a maximum drain-source voltage rating of 55 V.
The Rds(on) resistance is 7 mΩ, which contributes to its efficiency in power handling.
This MOSFET can handle a maximum power dissipation of up to 325 W.
The typical gate charge at Vgs is 220 nC.
It operates within a temperature range of -55°C to 175°C.
The package dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width.
This model supports through-hole mounting.
It is suitable for applications in power conversion, motor control, and energy management.
The forward voltage is 1.25 V, which helps minimize conduction losses.
The maximum gate-source voltage is -20 V to +20 V.
This MOSFET has a pin count of 3.
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