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onsemi UniFET N-Channel MOSFET 5A 500V Enhancement Mode 3-Pin TO-220F FDPF5N50T
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF5N50T |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 28W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Features a TO-220F package with through-hole mounting for easy integration.
- Has a low on-state resistance of 1.4Ω ensuring efficient power conduction.
- Supports a maximum power dissipation of 28W suitable for medium power applications.
- Operates within a wide temperature range from -55°C to 150°C for durability.
- Provides a typical gate charge of 11nC for fast switching performance.
- Equipped with maximum gate-source voltage ratings of -30V to +30V for protection.
- Compact dimensions of 16.07mm height, 10.36mm length, and 4.9mm width.
- Internal gate-source ESD diode enhances surge stress tolerance.
Product Description
onsemi FDPF5N50T UniFET N-Channel MOSFET is a high voltage, enhancement-mode transistor designed for efficient power conversion and switching applications. This transistor features a 3-pin TO-220F package with through-hole mounting, supporting a maximum continuous drain current of 5A and a drain-source voltage of 500V.
The device offers a low on-state resistance of 1.4Ω and maximum power dissipation of 28W, making it suitable for power factor correction circuits, electronic lamp ballasts, and advanced technology power supplies such as ATX and flat panel display power systems.
It operates reliably across a broad temperature range from -55°C up to 150°C, ensuring robustness under harsh industrial and commercial environments.
The typical gate charge of 11nC allows superior switching speeds, enhancing overall system efficiency. Its maximum gate-source voltage rating from -30V to +30V safeguards the device from voltage spikes.
Compact size with precise mechanical dimensions of 16.07mm height, 10.36mm length, and 4.9mm width allows for dense PCB designs. The internal gate-to-source ESD diode enables the UniFET to withstand surge stresses exceeding 2000V HBM, adding to device reliability.
Features a TO-220F package with through-hole mounting for easy integration. Has a low on-state resistance of 1.4Ω ensuring efficient power conduction. Supports a maximum power dissipation of 28W suitable for medium power applications.
Operates within a wide temperature range from -55°C to 150°C for durability. Provides a typical gate charge of 11nC for fast switching performance. Equipped with maximum gate-source voltage ratings of -30V to +30V for protection.
Compact mechanical dimensions ensuring PCB space efficiency. Internal gate-source ESD diode enhances surge stress tolerance. This onsemi MOSFET is ideal for industrial, electronic component manufacturing, power supply units, HVAC controls, and consumer electronics.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5A.
This unit has a maximum drain-source voltage rating of 500V.
It features a low on-state resistance of 1.4Ω, ensuring efficient power conduction.
The maximum power dissipation supported by this MOSFET is 28W.
This model operates within a wide temperature range from -55°C to 150°C.
It comes in a TO-220F package with through-hole mounting for easy integration.
The typical gate charge for this unit is 11nC, allowing for fast switching performance.
The maximum gate-source voltage ratings are -30V to +30V, providing protection against voltage spikes.
The dimensions are 16.07mm in height, 10.36mm in length, and 4.9mm in width.
This MOSFET has a pin count of 3.
It is suitable for power factor correction circuits, electronic lamp ballasts, and advanced technology power supplies.
The country of origin for this MOSFET is India.
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