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onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 NDC7003P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model NDC7003P
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Channel Type Type P
Maximum Continuous Drain Current Id 340mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 960mW
Typical Gate Charge Qg @ Vgs 1.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.8V
Transistor Configuration Isolated

Key Features

  • Designed with PowerTrench technology for increased system efficiency and power density.
  • Low gate charge of 1.6 nC supports fast switching applications.
  • Operates over a temperature range from -55°C to 150°C for versatile industrial use.
  • Isolated transistor configuration minimizes interference in circuits.
  • Surface mount SOT-23 package with 6 pins supports compact PCB layouts.
  • Maximum power dissipation of 960 mW ensures robust performance.
  • Low drain-source resistance of 10 Ω reduces conduction losses.
  • Typical forward voltage of -0.8 V enhances efficiency in synchronous rectification.

Product Description

onsemi NDC7003P is an Isolated PowerTrench 2 Type P-Channel MOSFET designed for efficient power switching with a maximum continuous drain current of 340 mA and a maximum drain-source voltage of 60 V. It comes in a compact 6-pin SOT-23 surface-mount package measuring 3 mm in length, 1.7 mm in width, and 1 mm in height, suitable for space-constrained electronic applications.

The PowerTrench® technology enables this MOSFET to offer high power density and system efficiency by combining a small gate charge of 1.6 nC with a soft body diode and reduced reverse recovery charge, which facilitates fast switching for synchronous rectification in AC/DC power supplies. The isolated transistor configuration helps to minimize interference in complex circuits.

This device is rated for operation from -55°C minimum to 150°C maximum, making it reliable in a wide range of industrial environments including telecommunications, power management, and signal processing.

The low drain-source resistance of 10 Ω and maximum power dissipation of 960 mW enhance energy efficiency and thermal performance. With a typical forward voltage of -0.8 V, it contributes to lower power loss in rectifier circuits.

It supports a maximum gate-source voltage range of -20 to +20 V, allowing flexibility in drive voltages. The dual element per chip design offers improved performance and reliability.

Designed for power-sensitive applications with enhanced switching speed. Suitable for Surface Mount Technology (SMT) assemblies using 6-pin SOT-23 package. Eliminates the need for additional snubber circuits due to superior soft body diode characteristics.

Optimized for low voltage and current applications requiring isolated transistor configurations. Robust to industrial temperature extremes and suitable for demanding environments.

This MOSFET is ideal for use in industrial electronics, telecommunications equipment, power supply designs, and other commercial electronics where efficiency and small footprint are essential. Explore more high-quality semiconductor components in the MOSFET category on EnvMart for your application needs.

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 NDC7003P
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