onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 340 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7003P

onsemi NDC7003P Isolated PowerTrench 2 Type P-Channel MOSFET is a precision semiconductor device engineered for efficient and reliable power switching applications. It supports a continuous drain current of 340 mA and endures a maximum drain-source voltage of 60 V, making it suitable for low- to medium-power circuit designs. The device utilizes enhancement mode channel technology with a PowerTrench series construction, ensuring low conduction losses.

Encased in a compact 6-pin SOT-23 surface mount package, this MOSFET fits well in high-density printed circuit boards. It features a maximum drain-source resistance of 10 ohms, contributing to improved system efficiency and lower power dissipation.

The device supports operating temperature ranges from -55°C to 150°C, allowing it to function reliably in industrial, automotive, and commercial electronics environments. It incorporates an isolated transistor configuration, which is advantageous for applications requiring electrical isolation between components.

With a typical gate charge of 1.6 nC and a maximum gate-source voltage rating between -20 V and +20 V, it enables rapid switching and robust gate control. The soft reverse recovery body diode minimizes switching losses and EMI in synchronous rectification and power supply circuits.

Compact physical dimensions (3 mm length, 1.7 mm width, 1 mm height) allow efficient space utilization on PCBs. The MOSFET's power dissipation rating of 960 mW ensures adequate heat management during continuous operation.

This device contains two elements per chip, allowing dual MOSFET configurations in a single package, optimizing circuit density and performance. Features enhancement mode channel operation for reliable switching. Compact 6-pin SOT-23 surface mount package.

Low maximum drain-source resistance improves efficiency. Wide operating temperature range from -55°C to 150°C. Isolated transistor configuration for versatile applications. Typical gate charge of 1.6 nC supports fast switching.

Maximum gate-source voltage rating from -20 V to +20 V. Soft reverse recovery diode enhances switching efficiency. Compact dimensions facilitate high-density PCB layouts. Power dissipation up to 960 mW for reliable thermal management.

Contains two elements per chip for dual MOSFET use.

This onsemi NDC7003P MOSFET is ideal for various industrial, automotive, and commercial electronics applications requiring efficient power switching, such as power supplies, synchronous rectification, and signal switching circuits. Explore additional semiconductor and power solution products in this category at EnvMart for comprehensive component sourcing.