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onsemi UniFET N-Channel MOSFET 39 A 200 V Enhancement Mode 3-Pin TO-220 FDPF39N20
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF39N20 |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 66mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Provides low on-state resistance for efficient power conversion.
- Enhancement mode N-channel MOSFET with 3-pin TO-220 package.
- Maximum continuous drain current of 39 amperes for heavy-duty loads.
- Maximum drain-source voltage rating of 200 volts.
- Designed for through-hole mounting with a compact TO-220 form factor.
- Maximum power dissipation of 37 watts supports high thermal loads.
- Includes internal gate-source ESD diode for protection against surges.
- Suitable for switching power converter, power factor correction, and electronic ballast applications.
Product Description
onsemi FDPF39N20 UniFET N-Channel MOSFET is a high voltage enhancement mode transistor designed for efficient switching applications. This MOSFET features a maximum continuous drain current of 39 amperes and a maximum drain-source voltage of 200 volts, making it ideal for use in power electronic circuits requiring fast switching and robust performance.
Housed in a durable TO-220 package with through-hole mount capability, the device offers excellent heat dissipation with a maximum power dissipation of 37 W. The internal gate-source ESD diode allows it to withstand surge stress up to 2000 V HBM, enhancing reliability in harsh operating environments.
The UniFET technology ensures the lowest on-state resistance among planar MOSFETs, leading to reduced conduction losses and improved efficiency in power converters. This MOSFET is well-suited for use in power factor correction (PFC) circuits, flat panel display TV power supplies, ATX power supplies, and electronic lamp ballasts.
Operating temperatures range from -55°C to 150°C, supporting wide industrial and commercial applications. The physical dimensions of 16.07 mm height, 10.36 mm length, and 4.9 mm width facilitate easy integration on printed circuit boards.
Provides low on-state resistance for efficient power conversion. Enhancement mode N-channel MOSFET with 3-pin TO-220 package. Maximum continuous drain current of 39 amperes for heavy-duty loads. Maximum drain-source voltage rating of 200 volts.
Designed for through-hole mounting with a compact TO-220 form factor. Maximum power dissipation of 37 watts supports high thermal loads. Includes internal gate-source ESD diode for protection against surges. Suitable for switching power converter, power factor correction, and electronic ballast applications.
Operates in a temperature range from -55°C to 150°C for reliability. Compact physical dimensions with height 16.07 mm, length 10.36 mm, and width 4.9 mm.
This product is ideal for use in industrial electronics, power management systems, HVAC controls, manufacturing equipment, and commercial electronic designs. Its robust construction and electrical characteristics make it a reliable component for demanding switching and amplification tasks.
Explore other semiconductor components and power MOSFET devices at EnvMart for comprehensive power electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 39 amperes, making it suitable for heavy-duty loads.
The maximum drain-source voltage rating for this N-channel MOSFET is 200 volts.
This model has a height of 16.07 mm, a length of 10.36 mm, and a width of 4.9 mm.
The maximum power dissipation is 37 watts, which supports high thermal loads.
It operates within a temperature range of -55°C to 150°C, suitable for various industrial applications.
This unit is designed for through-hole mounting, facilitating easy integration into circuit boards.
The typical gate charge at Vgs is 38 nC.
It is suitable for applications such as switching power converters, power factor correction, and electronic ballasts.
The internal gate-source ESD diode allows it to withstand surge stress up to 2000 V HBM.
The maximum gate-source voltage is -30V to +30V.
This model features an N-channel type, which is common for enhancement mode MOSFETs.
It belongs to the UniFET series, known for its efficient power conversion capabilities.
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