onsemi PowerTrench N-Channel MOSFET, 62 A, 200 V Enhancement, 3-Pin TO-220 FDP2614

onsemi FDP2614 is a PowerTrench N-Channel MOSFET designed to deliver robust performance in electronic circuits requiring high current and voltage handling capabilities. Rated for a maximum continuous drain current of 62 A and a drain source voltage of 200 V, this MOSFET operates in enhancement mode, which provides controlled conduction under applied gate voltage.

The device features a three-pin TO-220 package that facilitates through-hole mounting on various circuit boards, making it suitable for power management in industrial, automotive, and consumer electronics applications.

Key electrical characteristics include a maximum power dissipation of 260 W, enabling the MOSFET to handle high power loads effectively. It has a low typical gate charge of 76 nC at the specified gate voltage, which contributes to efficient switching and reduced power loss during operation.

Thermal endurance is ensured with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C, allowing reliable performance in a variety of environments and conditions.

The onsemi FDP2614 MOSFET’s maximum drain source resistance of 27 mΩ contributes to reduced conduction losses and improved efficiency. It supports gate source voltages ranging from -30 V to +30 V, providing robust protection against voltage transients.

Physical dimensions are compact and precise, measuring 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width, making integration straightforward in tight electronic assemblies.

Industrial uses include power conversion, motor drives, voltage regulation, and switching applications in sectors such as manufacturing, automotive electronics, and automation systems.

Set your designs apart with the reliable, efficient performance of onsemi FDP2614. Explore more solutions in our Semiconductor MOSFET category at EnvMart. Designed with PowerTrench technology for improved performance. Through-hole mount type suitable for various electronic assemblies.

Maximum power dissipation of 260 W supports demanding applications. Features a low typical gate charge of 76 nC at Vgs, enhancing switching efficiency. Operates reliably within temperature ranges from -55°C to 150°C. Maximum drain source resistance is 27 mΩ for efficient conduction.

Channel mode is enhancement type for controlled switching. Withstands gate source voltages of -30 V to +30 V ensuring durability. Compact dimensions with height 16.51 mm, length 10.67 mm, and width 4.83 mm.