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onsemi UniFET N-Channel MOSFET 44 A 500 V Enhancement Mode 3-Pin TO-247 FDH44N50
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FDH44N50 |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 750W |
| Typical Gate Charge Qg @ Vgs | 90nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a maximum continuous drain current of 44A for high power handling.
- Supports a maximum drain-source voltage of 500V ensuring robust performance.
- Equipped with a 3-pin TO-247 package for through-hole mounting.
- Maximum power dissipation up to 750W suitable for demanding environments.
- Operates between -55°C to 175°C for wide temperature robustness.
- Enhancement mode channel type with low maximum drain-source resistance of 120mΩ.
- Typical gate charge of 90nC offers superior switching performance.
- Includes internal gate-source ESD diode for high surge stress tolerance.
Product Description
onsemi FDH44N50 is a UniFET™ N-Channel MOSFET with a maximum continuous drain current of 44 A and a maximum drain-source voltage of 500 V. Designed for enhancement mode operation in a 3-pin TO-247 package, this device delivers superior switching performance and high avalanche energy strength suitable for power conversion applications.
UniFET MOSFETs from onsemi provide the smallest on-state resistance among planar MOSFETs, enabling efficient power management in various industrial sectors such as electronics manufacturing, HVAC controls, and lighting systems. The internal gate-source ESD diode allows the device to withstand surge stresses exceeding 2000 V HBM, enhancing reliability in demanding electrical environments.
The FDH44N50 offers a maximum power dissipation of 750 W and operates reliably within a temperature range from -55°C to 175°C, making it ideal for robust industrial and commercial use cases. Its low Rds(on) of 120 mΩ ensures minimal power loss during high current switching operations.
Maximum continuous drain current 44 A. Voltage rating 500 V drain-source maximum. Enhancement mode channel type. 3-pin TO-247 through-hole mount package. Max power dissipation of 750 W supports heavy loads. Operating temperature range -55°C to 175°C.
Typical gate charge 90 nC at 10 V gate drive. ESD diode protects against surges over 2000 V HBM. Compact package dimensions: 20.82 mm height, 15.87 mm length, 4.82 mm width.
This MOSFET is well-suited for switching power converters such as power factor correction (PFC) circuits, flat panel display power modules, ATX power supplies, and electronic lamp ballasts in industrial and commercial electronics. Its balanced performance and reliability make it a trusted component for engineers designing high efficiency power systems.
Explore more on MOSFET devices and power management components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 44 A.
It supports a maximum drain-source voltage of 500 V.
This unit comes in a 3-pin TO-247 package designed for through-hole mounting.
The maximum power dissipation is 750 W, suitable for demanding applications.
It operates reliably within a temperature range from -55°C to 175°C.
The typical gate charge is 90 nC at a 10 V gate drive.
This model utilizes an enhancement mode N-channel configuration.
The maximum drain-source resistance is 120 mΩ.
Yes, it includes an internal gate-source ESD diode that can withstand surge stresses exceeding 2000 V HBM.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.
It is well-suited for power conversion applications, including power factor correction circuits and ATX power supplies.
The maximum gate-source voltage is -30 V to +30 V.
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