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onsemi N-Channel Power MOSFET 3 A 60 V Enhancement Mode Surface Mount 4-Pin SOT-223 NVF3055L108T1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.65mm
Length 6.7mm
Model NVF3055L108T1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 3A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 7.6nC
Maximum Gate Source Voltage Vgs -15, +15V
Forward Voltage Vf 0.87V

Key Features

  • N-Channel MOSFET with enhancement mode operation for power switching.
  • Maximum continuous drain current of 3 A and drain-source voltage of 60 V.
  • Surface mount 4-Pin SOT-223 package for easy PCB integration.
  • High maximum power dissipation rating of 2.1 W for thermal efficiency.
  • Typical gate charge of 7.6 nC supports fast switching performance.
  • Wide operating temperature range from -55°C to 175°C.
  • Low maximum drain-source resistance of 120 milliohms reduces losses.
  • Automotive AEC-Q101 standard certified for automotive reliability.

Product Description

onsemi NVF3055L108T1G is a high-performance N-Channel Power MOSFET designed for power management and switching applications. It supports a continuous drain current of 3 A and withstands drain-source voltages up to 60 V. Packaged in a 4-Pin SOT-223 surface mount case, the device is optimized for efficient thermal dissipation and compact system integration.

This MOSFET utilizes enhancement mode channel operation, delivering fast switching with a typical gate charge of 7.6 nC. Its low on-resistance of 120 milli-ohms minimizes conduction losses, contributing to overall energy efficiency.

The device operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and harsh environment applications. It meets the automotive industry standard AEC-Q101, ensuring quality and reliability for automotive electronics.

With a maximum power dissipation of 2.1 W, the NVF3055L108T1G is well suited for use in power switching circuits, motor controls, and other power-sensitive electronics. Its compact size (1.65 mm height, 6.7 mm length, 3.7 mm width) enables its deployment in dense PCB designs.

This N-Channel MOSFET offers an enhancement mode operation suitable for power switching applications. Maximum continuous drain current is rated at 3 A with a maximum drain-source voltage of 60 V. Surface mount package type SOT-223 enables easy PCB integration and efficient heat dissipation.

The device supports a high maximum power dissipation of 2.1 W for enhanced thermal management. Typical gate charge is 7.6 nC at Vgs, enabling fast switching performance. Operating temperature ranges from -55°C up to 175°C allowing use in harsh environments.

Maximum drain-source resistance of 120 milliohms ensures low conduction losses. Features automotive grade AEC-Q101 certification for reliable automotive applications. Compact dimensions with height 1.65 mm, length 6.7 mm, and width 3.7 mm facilitate dense PCB layouts.

This Power MOSFET is ideal for a variety of electronics manufacturing, automotive power control, industrial automation, and consumer electronics applications. Reliable performance combined with compact, surface-mount packaging offers excellent design flexibility for engineers working on high-efficiency power control solutions.

Explore our extensive range of semiconductor components and power management devices on EnvMart to find compatible parts and accessories for your next project.

onsemi N-Channel Power MOSFET 3 A 60 V Enhancement Mode Surface Mount 4-Pin SOT-223 NVF3055L108T1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 3 A.

It can withstand a maximum drain-source voltage of 60 V.

This MOSFET is packaged in a 4-Pin SOT-223 surface mount package.

The typical gate charge is 7.6 nC at Vgs.

It operates reliably over a wide temperature range from -55°C to 175°C.

The maximum power dissipation rating is 2.1 W.

The maximum drain-source resistance is 120 milliohms.

Yes, it meets the automotive industry standard AEC-Q101 for reliability.

The dimensions are 1.65 mm in height, 6.7 mm in length, and 3.7 mm in width.

This model utilizes an enhancement mode N-channel configuration.

The maximum gate-source voltage is -15 V to +15 V.

It is suitable for power management and switching applications, including automotive and industrial uses.

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