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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NVF3055L108T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | -15, +15V |
| Forward Voltage Vf | 0.87V |
onsemi NVF3055L108T1G is a high-performance N-Channel Power MOSFET designed for power management and switching applications. It supports a continuous drain current of 3 A and withstands drain-source voltages up to 60 V. Packaged in a 4-Pin SOT-223 surface mount case, the device is optimized for efficient thermal dissipation and compact system integration.
This MOSFET utilizes enhancement mode channel operation, delivering fast switching with a typical gate charge of 7.6 nC. Its low on-resistance of 120 milli-ohms minimizes conduction losses, contributing to overall energy efficiency.
The device operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and harsh environment applications. It meets the automotive industry standard AEC-Q101, ensuring quality and reliability for automotive electronics.
With a maximum power dissipation of 2.1 W, the NVF3055L108T1G is well suited for use in power switching circuits, motor controls, and other power-sensitive electronics. Its compact size (1.65 mm height, 6.7 mm length, 3.7 mm width) enables its deployment in dense PCB designs.
This N-Channel MOSFET offers an enhancement mode operation suitable for power switching applications. Maximum continuous drain current is rated at 3 A with a maximum drain-source voltage of 60 V. Surface mount package type SOT-223 enables easy PCB integration and efficient heat dissipation.
The device supports a high maximum power dissipation of 2.1 W for enhanced thermal management. Typical gate charge is 7.6 nC at Vgs, enabling fast switching performance. Operating temperature ranges from -55°C up to 175°C allowing use in harsh environments.
Maximum drain-source resistance of 120 milliohms ensures low conduction losses. Features automotive grade AEC-Q101 certification for reliable automotive applications. Compact dimensions with height 1.65 mm, length 6.7 mm, and width 3.7 mm facilitate dense PCB layouts.
This Power MOSFET is ideal for a variety of electronics manufacturing, automotive power control, industrial automation, and consumer electronics applications. Reliable performance combined with compact, surface-mount packaging offers excellent design flexibility for engineers working on high-efficiency power control solutions.
Explore our extensive range of semiconductor components and power management devices on EnvMart to find compatible parts and accessories for your next project.
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