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onsemi N-Channel MOSFET, 300 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package 2N7002K

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onsemi N-Channel MOSFET, 300 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package 2N7002K

Name: onsemi N-Channel MOSFET, 300 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package 2N7002K
Brand: onsemi
SKU: 374134
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.2mm
Length	2.92mm
Model	2N7002K
Width	1.3mm
Mount Type	Surface
Series	2N7002K
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	4.8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	350mW
Typical Gate Charge Qg @ Vgs	0.7nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Supports a maximum continuous drain current of 300 mA for moderate power applications.
Maximum drain-source voltage rating of 60 V ensures reliable operation under elevated voltage.
Surface-mount SOT-23 package with 3 pins for easy PCB integration.
Enhancement mode N-channel MOSFET ideal for switching and amplification tasks.
Maximum power dissipation of 350 mW to handle reasonable thermal loads.
Wide operating temperature range from -55°C to 150°C for robust use in varied environments.
Typical gate charge of 0.7 nC ensures fast switching performance.
Low drain-source resistance of 4.8 Ohms minimizes conduction losses.

Product Description

onsemi 2N7002K N-Channel MOSFET is an enhancement mode field-effect transistor designed for reliable switching and amplification in electronic circuits. This device supports a maximum continuous drain current of 300 mA and a drain-source voltage of 60 V, making it suitable for a wide range of low-power applications across industrial, automotive, and consumer electronics sectors.

Housed in a compact surface-mount SOT-23 package with 3 pins, the 2N7002K offers ease of PCB assembly in dense circuit layouts. The transistor features a low drain-source resistance of 4.8 Ω, thereby reducing conduction losses and improving efficiency. Its typical gate charge of 0.7 nC supports fast switching speeds for dynamic electronic control systems.

This MOSFET is rated for a maximum power dissipation of 350 mW and can operate reliably over a broad temperature range from -55°C up to 150°C. Such thermal tolerance makes it suitable for demanding automotive applications compliant with AEC-Q101 standards as well as general electronic device manufacture.

Maximum continuous drain current: 300 mA. Drain-source voltage: 60 V. Surface mount SOT-23 package with 3 pins. Enhancement mode N-channel operation. Power dissipation: 350 mW. Operating temperature: -55°C to 150°C. Typical gate charge: 0.7 nC.

Drain-source resistance: 4.8 Ω. Automotive standard: AEC-Q101 compliant.

These features make the onsemi 2N7002K MOSFET an excellent choice for circuit designers seeking a reliable, compact transistor with proven automotive and industrial credentials. Explore the range of onsemi discrete semiconductor devices for your next industrial automation, power management, or consumer electronics project at EnvMart.