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onsemi PowerTrench Type P-Channel MOSFET, 8 A, 12 V, Enhancement Mode, 6-Pin MLP Package FDME905PT

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.5mm
Length 1.6mm
Model FDME905PT
Width 1.6mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type MLP
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 8A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 97mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V

Key Features

  • Maximum continuous drain current of 8 amperes ensures robust power handling capabilities.
  • Maximum drain-source voltage rating of 12 volts suitable for low voltage applications.
  • Low drain-source on resistance of 97 milliohms contributes to high efficiency.
  • Compact 6-pin MLP package with small footprint supports modern circuit board designs.
  • Operating temperature range from -55°C to 150°C for reliability across environments.
  • Maximum power dissipation of 2.1 watts enables effective thermal management.
  • Typical gate charge of 14 nanocoulombs reduces switching losses and improves speed.
  • Forward body diode voltage of -1.2 volts with soft recovery characteristics beneficial for synchronous rectification.

Product Description

The onsemi FDME905PT is a PowerTrench® type P-channel MOSFET transistor engineered for enhancement mode switching applications. Packaged in a compact 6-pin MLP surface mount package, it supports high-efficiency power switching in modern electronic circuits.

This MOSFET offers a maximum continuous drain current of 8 amperes and maximum drain-source voltage of 12 volts, making it well-suited for low voltage power management roles. With a low drain-source resistance of 97 milliohms, the device minimizes conduction losses, contributing to improved system power density and efficiency.

The MOSFET features a thermal power dissipation capacity of 2.1 watts and operates reliably across a broad temperature range from -55°C up to 150°C, ensuring robust performance in industrial, consumer electronics, and automotive applications.

Its typical gate charge of 14 nanocoulombs enables fast switching capabilities, reducing switching losses in synchronous rectification circuits. The integrated soft body diode with forward voltage of approximately -1.2 volts allows for elimination or simplification of snubber circuits.

With a shielded-gate PowerTrench structure, the FDME905PT ensures balanced charge and reduced figure of merit (FOM), making it a top choice for applications requiring fast switching and high power efficiency. The device’s small physical dimensions (1.6 mm x 1.6 mm footprint, 0.5 mm height) facilitate high-density PCB designs.

Maximum continuous drain current of 8 A ensures robust operation under load. Maximum drain-source voltage of 12 V supports low-voltage power circuits. Low on-state resistance of 97 milliohms for reduced conduction losses.

Compact 6-pin MLP package for space-constrained electronic assemblies. Wide operating temperature range (-55°C to 150°C) supports harsh environments. Typical gate charge of 14 nC aids in fast switching and efficiency. Soft body diode reduces switching noise and snubber circuit needs.

PowerTrench® technology optimizes device performance and reliability. Small dimensions for easy integration in compact electronic devices.

The onsemi FDME905PT P-channel MOSFET is ideal for industrial, automotive, consumer electronics, power management, and HVAC systems requiring efficient power switching and reliable thermal performance. It supports surface mount assembly, enabling automated manufacturing and compact system design.

Explore more power semiconductor devices and electronic components in the Electronics & Electricals category at EnvMart.

onsemi PowerTrench Type P-Channel MOSFET, 8 A, 12 V, Enhancement Mode, 6-Pin MLP Package FDME905PT
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Frequently Asked Questions

The maximum continuous drain current for this model is 8 amperes, ensuring robust power handling capabilities.

The maximum drain-source voltage rating is 12 volts, making it suitable for low voltage applications.

It has a low drain-source on resistance of 97 milliohms, which contributes to high efficiency in power management.

The typical gate charge is 14 nanocoulombs, which helps reduce switching losses and improves speed.

The operating temperature range is from -55°C to 150°C, ensuring reliability across various environments.

This model is packaged in a compact 6-pin MLP surface mount package, supporting modern circuit board designs.

The maximum power dissipation for this MOSFET is 2.1 watts, enabling effective thermal management.

The forward body diode voltage is approximately -1.2 volts, featuring soft recovery characteristics beneficial for synchronous rectification.

The dimensions are 1.6 mm in length, 1.6 mm in width, and 0.5 mm in height, facilitating high-density PCB designs.

This model features a P-channel type, designed for enhancement mode switching applications.

The maximum gate-source voltage for this MOSFET is -8V to +8V, allowing for versatile application in power management.

It is suitable for industrial, automotive, consumer electronics, power management, and HVAC systems that require efficient power switching.

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