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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.5mm |
| Length | 1.6mm |
| Model | FDME905PT |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 97mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
The onsemi FDME905PT is a PowerTrench® type P-channel MOSFET transistor engineered for enhancement mode switching applications. Packaged in a compact 6-pin MLP surface mount package, it supports high-efficiency power switching in modern electronic circuits.
This MOSFET offers a maximum continuous drain current of 8 amperes and maximum drain-source voltage of 12 volts, making it well-suited for low voltage power management roles. With a low drain-source resistance of 97 milliohms, the device minimizes conduction losses, contributing to improved system power density and efficiency.
The MOSFET features a thermal power dissipation capacity of 2.1 watts and operates reliably across a broad temperature range from -55°C up to 150°C, ensuring robust performance in industrial, consumer electronics, and automotive applications.
Its typical gate charge of 14 nanocoulombs enables fast switching capabilities, reducing switching losses in synchronous rectification circuits. The integrated soft body diode with forward voltage of approximately -1.2 volts allows for elimination or simplification of snubber circuits.
With a shielded-gate PowerTrench structure, the FDME905PT ensures balanced charge and reduced figure of merit (FOM), making it a top choice for applications requiring fast switching and high power efficiency. The device’s small physical dimensions (1.6 mm x 1.6 mm footprint, 0.5 mm height) facilitate high-density PCB designs.
Maximum continuous drain current of 8 A ensures robust operation under load. Maximum drain-source voltage of 12 V supports low-voltage power circuits. Low on-state resistance of 97 milliohms for reduced conduction losses.
Compact 6-pin MLP package for space-constrained electronic assemblies. Wide operating temperature range (-55°C to 150°C) supports harsh environments. Typical gate charge of 14 nC aids in fast switching and efficiency. Soft body diode reduces switching noise and snubber circuit needs.
PowerTrench® technology optimizes device performance and reliability. Small dimensions for easy integration in compact electronic devices.
The onsemi FDME905PT P-channel MOSFET is ideal for industrial, automotive, consumer electronics, power management, and HVAC systems requiring efficient power switching and reliable thermal performance. It supports surface mount assembly, enabling automated manufacturing and compact system design.
Explore more power semiconductor devices and electronic components in the Electronics & Electricals category at EnvMart.
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