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onsemi Type P-Channel MOSFET 2.9 A, 30 V, Enhancement Mode, 4-Pin SOT-223 NTF5P03T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NTF5P03T3G |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NTF |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.13W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- High-performance P-Channel MOSFET in a compact 4-Pin SOT-223 package.
- Designed for surface mount applications with enhancement mode operation.
- Maximum continuous drain current of 2.9 A and voltage rating of 30 V.
- Power dissipation rating up to 3.13 W.
- Wide operating temperature range from -55°C to 150°C.
- Low maximum drain-source resistance of 150 milliohms.
- Typical gate charge of 15 nC at Vgs.
- Automotive grade AEC compliance for enhanced durability.
Product Description
onsemi NTF5P03T3G is a Type P-Channel Power MOSFET designed for use in electronic and semiconductor applications requiring efficient power switching. It supports a maximum continuous drain current of 2.9 A and operates at a voltage up to 30 V. Enclosed in a space-efficient 4-Pin SOT-223 surface mount package, this MOSFET provides reliable performance with a maximum power dissipation of 3.13 watts.
Engineered for enhancement mode operation, the device offers low on-resistance of 150 milliohms, improving system energy efficiency and heat management. With typical gate charge of 15 nanocoulombs at gate-source voltages and a maximum gate-source voltage range of -20 V to +20 V, it facilitates fast switching and lower gate drive power consumption.
The device operates reliably within a wide temperature range from -55°C to 150°C, suitable for demanding industrial, automotive, and commercial electronics environments. It meets automotive AEC standards, ensuring robust performance under rigorous conditions.
Its compact physical dimensions (6.7 mm length, 3.7 mm width, 1.65 mm height) make it ideal for densely packed PCB designs and applications requiring surface mount components. High-performance P-Channel MOSFET in a compact 4-Pin SOT-223 package.
Designed for surface mount applications with enhancement mode operation. Maximum continuous drain current of 2.9 A and voltage rating of 30 V. Power dissipation rating up to 3.13 W. Wide operating temperature range from -55°C to 150°C.
Low maximum drain-source resistance of 150 milliohms. Typical gate charge of 15 nC at Vgs. Automotive grade AEC compliance for enhanced durability.
onsemi’s NTF5P03T3G MOSFET is suited for use in industrial power management, automotive electronic controls, consumer electronics, and general semiconductor switching applications. Its reliable performance under wide temperature ranges and the automotive standard ensures suitability for harsh environments including HVAC systems, embedded systems, and manufacturing equipment.
Explore more onsemi power semiconductor devices and similar MOSFET components in EnvMart’s Electronics & Electricals category for high-quality industrial and laboratory use.
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Frequently Asked Questions
The maximum continuous drain current of this model is 2.9 A.
This P-Channel MOSFET has a maximum voltage rating of 30 V.
It has a power dissipation rating of up to 3.13 W.
The device is enclosed in a 4-Pin SOT-223 surface mount package.
This MOSFET operates reliably within a temperature range from -55°C to 150°C.
The maximum drain-source resistance is 150 milliohms.
The typical gate charge at gate-source voltages is 15 nanocoulombs.
It meets the automotive AEC standard for enhanced durability.
Its dimensions are 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height.
The maximum gate-source voltage range is -20 V to +20 V.
This device is a Type P-Channel MOSFET, designed for enhancement mode operation.
This MOSFET is suitable for industrial power management, automotive electronic controls, and general semiconductor switching applications.
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