onsemi Isolated Dual Type P and Type N-Channel Power MOSFET, 7 A, 30 V, 8-Pin ECH Package ECH8661-TL-H

onsemi ECH8661-TL-H is a highly integrated isolated dual power MOSFET device containing both P-channel and N-channel transistors in a single compact 8-pin ECH package. It is designed for applications requiring low control signal voltages, low battery voltages, and high load currents, making it suitable for diverse electronics systems.

The N-channel MOSFET transistor includes internal electrostatic discharge (ESD) protection and can be driven by logic-level signals as low as 1.5 V. The P-channel transistor, manufactured using ON Semiconductor's trench technology, is well-suited for load switching tasks, providing efficient and reliable operation.

This Power MOSFET device supports a maximum continuous drain current of 7 A and can withstand a maximum drain-source voltage of 30 V. It features an enhancement mode channel type for both transistors and ensures a typical gate charge of 11.8 nC at Vgs, contributing to fast switching and switching efficiency.

With a maximum power dissipation of 1.3 W and an operating temperature range up to 150°C, the ECH8661-TL-H can be employed reliably in demanding environments such as industrial electronics, automotive electronics, and power management systems.

The compact 8-pin ECH surface mount package, measuring 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height, facilitates space-efficient layout in modern electronic device designs. This dual transistor MOSFET solution is ideal for applications including power switching, battery-operated circuits, and signal amplification.

The device integrates both P-channel and N-channel MOSFETs for flexible circuit design. It features an 8-pin ECH surface mount package suitable for compact electronics. Maximum power dissipation is 1.3 W, enabling efficient thermal management.

The MOSFET supports a gate source voltage range of -20 V to +20 V. Typical gate charge is 11.8 nC at Vgs, allowing fast switching performance. Operating temperature withstands up to 150°C for reliability in harsh conditions.

N-channel transistor includes internal ESD protection and logic level drive capability. P-channel transistor is optimized for load switching applications with ON Semiconductor's trench technology. Package dimensions: 2.9 mm length, 2.3 mm width, and 0.9 mm height ensuring small form factor integration.

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