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Infineon RF Bipolar Transistor NPN 80 mA 20 V 3-Pin SOT-323 BFR193WH6327XTSA1

Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.9mm
Length 2.1mm
Model BFR193WH6327XTSA1
Width 2mm
Mount Type Surface
Series BFR193W
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 2V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 580mW
Maximum DC Collector Current Idc 80mA
Transistor Configuration Single
Maximum Transition Frequency ft 8GHz

Key Features

  • This transistor is designed for RF applications requiring maximum collector current of 80 mA.
  • It provides a maximum collector-emitter voltage of 20 V suitable for low-voltage circuits.
  • The surface mount SOT-323 package ensures compact PCB design efficiency.
  • Featuring a high transition frequency of 8 GHz, it excels in high-frequency switching.
  • Rated for maximum power dissipation of 580 mW, enabling robust performance.
  • It has a minimum DC current gain of 70 ensuring effective amplification.
  • Operating temperature ranges from -55°C to 150°C for reliable industrial use.
  • Complies with RoHS standards and automotive standard AEC-Q101 for quality assurance.

Product Description

Infineon BFR193WH6327XTSA1 is a high-performance RF bipolar transistor with NPN polarity, designed for efficient operation in radio frequency applications requiring precision and robustness. It supports a maximum DC collector current of 80 mA and maximum collector-emitter voltage of 20 V, making it suitable for sensitive and low-power electronics.

The transistor comes in a compact 3-Pin SOT-323 surface mount package measuring 2.1 mm in length, 2 mm in width, and 0.9 mm in height, enabling space-efficient PCB layouts in industrial, automotive, communications, and consumer electronics applications. It sustains a maximum operating temperature of up to 150°C and a minimum temperature as low as -55°C.

Its high transition frequency of 8 GHz and power dissipation rating of 580 mW ensure it performs reliably under demanding RF conditions. The minimum DC current gain of 70 supports effective signal amplification, vital for analog and switching circuits.

The transistor is RoHS compliant and meets the automotive-grade AEC-Q101 standard, confirming its suitability for stringent quality and safety requirements in automotive electronics manufacturing.

This RF bipolar transistor is designed to provide high-frequency performance with NPN configuration. Supports surface mount assembly for improved manufacturing efficiency and product integration. Wide operating temperature range supports industrial, automotive, and commercial uses.

Compact SOT-323 package optimizes space on PCBs for complex electronic systems. High power dissipation and gain values enhance reliability in sensitive electronic functions. Meets international environmental compliance with RoHS certification.

Automotive certified under AEC-Q101 for usage in vehicle electronic systems.

This Infineon bipolar transistor is ideal for engineers and manufacturers seeking reliable RF semiconductors for applications such as communications equipment, industrial instrumentation, automotive electronics, and other discrete semiconductor uses. Explore more Infineon semiconductor products and Bipolar Transistors at EnvMart for industrial and manufacturing needs.

Infineon RF Bipolar Transistor NPN 80 mA 20 V 3-Pin SOT-323 BFR193WH6327XTSA1
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Frequently Asked Questions

The maximum collector current for this model is 80 mA.

It supports a maximum collector-emitter voltage of 20 V.

The high transition frequency of this transistor is 8 GHz, making it suitable for high-frequency applications.

It has a maximum power dissipation rating of 580 mW.

The dimensions of the SOT-323 package are 2.1 mm in length, 2 mm in width, and 0.9 mm in height.

The operating temperature range is from -55°C to 150°C.

Yes, it complies with RoHS standards.

It meets the automotive standard AEC-Q101, confirming its suitability for automotive applications.

The minimum DC current gain is 70, which supports effective signal amplification.

This unit uses an NPN transistor configuration.

It utilizes a surface mount type for improved manufacturing efficiency.

It is suitable for applications in communications equipment, industrial instrumentation, and automotive electronics.

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