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STMicroelectronics N-Channel IGBT 30 A 600 V, 3-Pin TO-247, Through Hole STGW30NC60WD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 14.8mm |
| Model | STGW30NC60WD |
| Width | 15.75mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC Standard JESD97 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 200W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum continuous collector current is 30A ensuring high current handling capability.
- Maximum collector emitter voltage rating of 600V offers robust voltage tolerance.
- Power dissipation up to 200W supports heavy-duty operation.
- Packaged in TO-247 with 3-pin configuration for through-hole mounting.
- Operating temperature range from -55°C to 150°C for versatile industrial use.
- Maximum gate emitter voltage is ±20 V ensuring signal robustness.
- Maximum collector emitter saturation voltage is 2.5V enabling efficient conduction.
- JEDEC Standard JESD97 certified for quality and performance assurance.
Product Description
STMicroelectronics STGW30NC60WD N-Channel Insulated Gate Bipolar Transistor (IGBT) is designed for high efficiency with fast switching speeds. Featuring a maximum continuous collector current of 30A and a collector emitter voltage of 600V, it is suitable for demanding power semiconductor applications.
This device is supplied in a TO-247 package with a through-hole mount and a 3-pin configuration, enabling robust installation on printed circuit boards. It offers a maximum power dissipation rating of 200W, supporting industrial-grade loads and power control scenarios.
The maximum gate emitter voltage rating of ±20 V and a collector emitter saturation voltage of 2.5V ensure reliable gate control and low conduction losses. It is designed to operate over a wide temperature range from -55°C up to 150°C, making it adaptable for harsh environments in sectors such as manufacturing, HVAC control, renewable energy systems, and industrial automation.
The product complies with JEDEC Standard JESD97 for IGBT devices, guaranteeing trusted semiconductor standards and quality. The compact dimensions (14.8mm length, 15.75mm width, 20.15mm height) facilitate integration into dense electronic circuits, enhancing design flexibility.
Applications include power inverters, motor drives, uninterruptible power supplies (UPS), and other high-power switching uses. This IGBT helps combine the advantages of MOSFET gate drive simplicity and bipolar transistor high current carrying capability for efficient power switching solutions.
Maximum continuous collector current 30A. Collector emitter voltage rating 600V. Power dissipation up to 200W. TO-247 package, 3-pin through hole mount. Operating temperature range from -55°C to 150°C. Maximum gate emitter voltage ±20 V.
Collector emitter saturation voltage 2.5V. Certified to JEDEC Standard JESD97. Compact dimensions 14.8 x 15.75 x 20.15 mm. Explore more industrial semiconductor components and power devices on EnvMart to meet your design and production requirements.
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Frequently Asked Questions
The maximum continuous collector current of the STGW30NC60WD is 30A, ensuring high current handling capability for demanding applications.
This IGBT has a collector emitter voltage rating of 600V, providing robust voltage tolerance for power applications.
It supports a maximum power dissipation of up to 200W, making it suitable for heavy-duty operation.
The operating temperature range for this model is from -55°C to 150°C, allowing for versatile use in various industrial environments.
It is packaged in a TO-247 configuration with a 3-pin setup for through-hole mounting on printed circuit boards.
The maximum gate emitter voltage for the STGW30NC60WD is ±20 V, ensuring reliable gate control.
The maximum collector emitter saturation voltage is 2.5V, enabling efficient conduction during operation.
The dimensions of the STGW30NC60WD are 14.8mm in length, 15.75mm in width, and 20.15mm in height.
This model complies with JEDEC Standard JESD97, ensuring quality and performance assurance for semiconductor devices.
It is suitable for applications such as power inverters, motor drives, uninterruptible power supplies (UPS), and other high-power switching uses.
The STGW30NC60WD is an N-channel IGBT, combining the advantages of MOSFET gate drive simplicity and high current carrying capability.
This IGBT features a pin count of 3, suitable for its through-hole mounting configuration.
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