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onsemi N-Channel MOSFET, 20 A, 30 V Enhancement Mode, 3-Pin TO-252 Package NTD20N03L27T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NTD20N03L27T4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | NTD |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 31mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 18.9nC |
| Maximum Gate Source Voltage Vgs | -24, +24V |
| Forward Voltage Vf | 0.9V |
Key Features
- Supports a maximum continuous drain current of 20 amperes.
- Maximum drain-source voltage is 30 volts.
- Uses enhancement mode channel operation.
- Features a low maximum drain-source resistance of 31 milliohms.
- Has a typical gate charge of 18.9 nanocoulombs at rated gate voltage.
- Maximum power dissipation capacity of 74 watts.
- Surface mount TO-252 package type suitable for PCB mounting.
- Operating temperature range from -55°C minimum to 150°C maximum.
Product Description
onsemi NTD20N03L27T4G is a high-performance N-Channel Power MOSFET designed for efficient switching and amplification in electronic circuits. With a maximum continuous drain current of 20 A and a drain-source voltage rating of 30 V, this device operates reliably within demanding industrial, automotive, and commercial applications.
It features an enhancement mode channel with a low maximum Rds(on) of 31 milliohms, minimizing conduction losses and improving energy efficiency. The MOSFET is housed in a compact TO-252 surface mount package with 3 pins, optimized for integration in PCB designs where space and thermal management are critical.
The typical gate charge of 18.9 nC ensures fast switching capabilities, suitable for power management, motor controllers, DC-DC converters, and general purpose switching. Additionally, it withstands a wide operating temperature range from -55°C to 150°C, making it highly reliable for automotive and industrial environments. The device complies with the AEC-Q101 automotive standard, ensuring quality and durability for vehicle electronics.
Supports a maximum continuous drain current of 20 amperes. Maximum drain-source voltage is 30 volts. Utilizes enhancement mode channel operation for efficient switching. Low Rds(on) of 31 mΩ reduces power losses. Typical gate charge of 18.9 nC enables fast switching.
Maximum power dissipation of 74 W manages thermal load effectively. Compact 3-pin TO-252 surface mount package design. Wide operating temperature range of -55°C to 150°C enhances reliability. Meets AEC-Q101 standard ensuring automotive grade compliance.
Small physical dimensions facilitate PCB integration.
This MOSFET is suitable for a wide range of industrial and commercial applications, including power supplies, motor control, automotive electronics, and power management systems. Its robust thermal performance and automotive qualification make it an ideal choice for demanding environments requiring long-term reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes.
This MOSFET has a maximum drain-source voltage rating of 30 volts.
The maximum power dissipation capacity of this unit is 74 watts.
The typical gate charge at rated gate voltage for this device is 18.9 nanocoulombs.
It features a low maximum drain-source resistance (Rds(on)) of 31 milliohms.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
This MOSFET operates within a temperature range from -55°C to 150°C.
It complies with the AEC-Q101 automotive standard, ensuring quality for automotive applications.
The TO-252 package has 3 pins.
This model utilizes an enhancement mode channel for efficient switching.
This MOSFET is suitable for applications including power management, motor controllers, and automotive electronics.
The maximum gate-source voltage for this device is -24V to +24V.
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