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onsemi N-Channel Power MOSFET 3 A 60 V Enhancement Mode Surface Mount SOT-223 3-Pin NTF3055-100T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NTF3055-100T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports a maximum continuous drain current of 3 amperes.
- Maximum drain-source voltage rating of 60 volts ensures robust operation.
- Features a low drain-source resistance of 110 milliohms for efficient conduction.
- Capable of dissipating up to 2.1 watts of power in operation.
- Operates reliably within a temperature range from -55°C to 175°C.
- Compact SOT-223 package with 3 pins facilitates surface mounting on PCBs.
- Typical gate charge of 22 nanocoulombs optimizes switching speed.
- Gate-source voltage tolerance of -20 V to +20 V protects the device during operation.
Product Description
onsemi NTF3055-100T1G is an N-Channel Power MOSFET designed for electronic and power management applications. It offers a maximum continuous drain current of 3 A and a drain-source voltage of 60 V, making it suitable for controlling medium-power loads with efficiency.
This device is housed in a compact 3-pin SOT-223 surface mount package, enabling easy integration into printed circuit boards for compact electronic designs. With a low maximum drain-source resistance of 110 milliohms, it minimizes conduction losses, contributing to improved energy efficiency.
The MOSFET features an enhancement mode channel, designed to turn on when a positive gate voltage is applied, allowing precise control in switching applications. It can dissipate up to 2.1 watts of power and functions reliably over a wide temperature range from -55°C to 175°C, supporting harsh industrial and automotive environments.
Electrical characteristics include a typical gate charge of 22 nanocoulombs at gate-source voltage, enabling fast switching speeds necessary for modern electronics. The device tolerates gate-source voltages ranging from -20 V to +20 V, which protects against voltage spikes during operation.
Supports a maximum continuous drain current of 3 amperes. Maximum drain-source voltage rating of 60 volts. Low on-resistance enhances efficiency. Power dissipation capability of 2.1 watts. Wide operating temperature range from -55°C to 175°C.
Compact surface mount package SOT-223 with 3 pins. Fast switching with gate charge of 22 nC. Robust gate-source voltage limits (-20 V to +20 V). Ideal for power switching and amplification circuits in industrial, automotive, and electronics applications.
This MOSFET is commonly used in power supply circuits, motor drivers, switching regulators, and other power control applications in industrial and commercial electronic equipment. Explore a wide range of power MOSFETs and related electronic components on EnvMart to optimize your designs and manufacturing processes.
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Frequently Asked Questions
The maximum continuous drain current for the NTF3055-100T1G is 3 amperes.
This model has a maximum drain-source voltage rating of 60 volts.
It can dissipate up to 2.1 watts of power during operation.
The NTF3055-100T1G is housed in a compact SOT-223 package with 3 pins.
The typical gate charge at gate-source voltage is 22 nanocoulombs.
It operates reliably within a temperature range from -55°C to 175°C.
The maximum gate-source voltage tolerance is -20 V to +20 V.
The maximum drain-source resistance is 110 milliohms.
This model features an enhancement mode N-channel.
It is suitable for power switching and amplification circuits in industrial, automotive, and electronics applications.
The forward voltage is specified at 1 volt.
The country of origin for this model is India.
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