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onsemi P-Channel MOSFET, 180 mA Continuous Drain Current, 50 V Drain Source Voltage, 3-Pin SOT-23 Surface Mount BSS84AK,215

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onsemi P-Channel MOSFET, 180 mA Continuous Drain Current, 50 V Drain Source Voltage, 3-Pin SOT-23 Surface Mount BSS84AK,215

Name: onsemi P-Channel MOSFET, 180 mA Continuous Drain Current, 50 V Drain Source Voltage, 3-Pin SOT-23 Surface Mount BSS84AK,215
Brand: onsemi
SKU: 371467
Price: 0.04 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	3mm
Model	BSS84AK,215
Width	1.4mm
Mount Type	Surface
Series	BSS84AK
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	180mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	7.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	420mW
Typical Gate Charge Qg @ Vgs	0.26nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.1V
onsemi BVSS8L Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23Brand	onsemi

Key Features

Features an enhancement-type channel mode for efficient switching.
Maximum power dissipation rated at 420 mW.
Low maximum drain-source resistance of 7.5 ohms for reduced power loss.
Operates in temperatures ranging from -55°C to 150°C.
Typical gate charge is 0.26 nC, supporting fast switching speeds.
Compliance with automotive standard AEC-Q101 ensures reliability in automotive applications.
Supports a maximum gate-source voltage of -20 V to +20 V.
Forward voltage drop is nominally 1.1 V under operational conditions.

Product Description

The Nexperia BSS84AK,215 is a P-Channel MOSFET housed in a compact 3-pin SOT-23 surface-mount package. It is designed to handle a maximum continuous drain current of 180 mA with a drain-source voltage capability of up to 50 V, making it suitable for a broad range of low-power switching applications.

This MOSFET employs an enhancement channel mode, ensuring improved switching and reduced power dissipation. The device supports operational temperatures from -55°C to 150°C, which makes it robust for demanding industrial and automotive environments. Its compliance with the AEC-Q101 automotive standard underscores its suitability in automotive electronics, ensuring high reliability and durability.

Key electrical characteristics include a low maximum drain-source resistance of 7.5 Ω and a typical gate charge of only 0.26 nC at specified gate voltage, enabling efficient and rapid switching responses. The maximum gate-source voltage rating of -20 V to +20 V helps provide protection and flexible control in circuit design.

This compact MOSFET measures 3 mm in length, 1.4 mm in width, and 1 mm in height, allowing for efficient PCB space utilization in electronic designs where size constraints are critical.

The product is typically used in power management circuits, automotive electronics, and other industrial applications requiring reliable low-voltage, low-current switching components.

Features an enhancement-type channel mode for efficient switching. Maximum power dissipation rated at 420 mW. Low maximum drain-source resistance of 7.5 ohms reduces conduction losses. Wide operating temperature range ensures durability in harsh environments.

Automotive-grade compliance (AEC-Q101) for enhanced reliability. Explore more semiconductor components and MOSFET products within the Electronics & Electricals catalog on EnvMart.