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onsemi P-Channel MOSFET 150 mA 50 V Enhancement 3-Pin SC-70 Package BSS84AKW,115

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model BSS84AKW,115
Width 1.35mm
Mount Type Surface
Series BSS84AKW
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 150mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 7.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 310mW
Typical Gate Charge Qg @ Vgs 0.26nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.1V
onsemi BVSS8L Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23Brand onsemi

Key Features

  • This device operates in enhancement mode for reliable and precise control.
  • Features a low maximum drain-source resistance of 7.5 Ω, ensuring minimal power loss.
  • Typically requires only 0.26 nC gate charge at specified gate voltage, enabling fast switching.
  • Supports a wide operating temperature range from -55°C to 150°C for versatile applications.
  • Equipped with a 3-pin surface mount SC-70 package measuring 2.2 mm length, 1.35 mm width, and 1 mm height.
  • Validated for automotive applications with AEC-Q101 standard compliance.

Product Description

Nexperia BSS84AKW,115 is a P-Channel MOSFET transistor designed for electronic switching and amplification in compact electronic devices. This discrete semiconductor device supports a maximum continuous drain current of 150 mA and withstands a maximum drain-source voltage of 50 V. It operates in enhancement mode, providing precise control and efficiency.

The transistor is housed in a 3-pin surface mount SC-70 package with small dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height, making it ideal for space-constrained applications. It features a low maximum drain-source resistance of 7.5 Ω which ensures low power dissipation and improved performance. Typical gate charge is 0.26 nC at the specified gate voltage, enabling high-speed switching suitable for modern electronic circuits.

The MOSFET maintains reliable operation across a wide temperature range from -55°C to 150°C, making it suitable for automotive and industrial environments. It is compliant with the AEC-Q101 automotive standard, ensuring durable performance in harsh conditions. This transistor supports a maximum power dissipation of 310 mW and includes gate voltage limits of -20 V to +20 V for safe operation.

Common use cases include electronic switching, power management, amplification, automotive electronics, and compact consumer electronics where size and power efficiency are critical. The Nexperia BSS84AKW,115 supports surface mount technology for automated PCB assembly processes.

This device operates in enhancement mode for reliable and precise control. Features a low maximum drain-source resistance of 7.5 Ω, ensuring minimal power loss. Typically requires only 0.26 nC gate charge at specified gate voltage, enabling fast switching.

Supports a wide operating temperature range from -55°C to 150°C for versatile applications. Equipped with a 3-pin surface mount SC-70 package measuring 2.2 mm length, 1.35 mm width, and 1 mm height. Validated for automotive applications with AEC-Q101 standard compliance.

This product is suitable for industrial, automotive, consumer electronics, and manufacturing applications. For more electronic component options, browse EnvMart's semiconductor and MOSFET categories.

onsemi P-Channel MOSFET 150 mA 50 V Enhancement 3-Pin SC-70 Package BSS84AKW,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 150 mA.

It can withstand a maximum drain-source voltage of 50 V.

This MOSFET operates over a wide temperature range from -55°C to 150°C.

The maximum power dissipation for this model is 310 mW.

It is housed in a 3-pin SC-70 package with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height.

The typical gate charge at the specified gate voltage is 0.26 nC.

The maximum drain-source resistance is 7.5 Ω.

Yes, it is validated for automotive applications with AEC-Q101 standard compliance.

This device features a P-Channel type channel.

The gate-source voltage limits are -20 V to +20 V.

It is suitable for electronic switching, power management, amplification, and automotive electronics.

The country of origin for this device is India.

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